Loading...

STAP57060

STMicroelectronics

STAP57060 by STMicroelectronics

STAP57060 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,415 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,415

-

-

-

-

Vyrian

USA . 2,921 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,921

-

-

-

-

Anansix

USA . 728 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

728

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,386 parts In-Stock

1+ parts

$1.009

100+ parts

-

1k+ parts

$0.908

10k+ parts

-

1,386

$1.009

-

$0.908

-

MKK Technologies

India . 1,799 parts In-Stock

1+ parts

$1.898

100+ parts

-

1k+ parts

-

10k+ parts

-

1,799

$1.898

-

-

-

DigiPath Technology Company

USA . 1,799 parts In-Stock

1+ parts

$1.898

100+ parts

-

1k+ parts

-

10k+ parts

-

1,799

$1.898

-

-

-

Parana Technologies

USA . 620 parts In-Stock

1+ parts

-

100+ parts

$1.207

1k+ parts

-

10k+ parts

-

620

-

$1.207

-

-

Corphita

USA . 448 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

448

-

-

-

-

Overview

Elevate your RF applications with the STAP57060 from STMicroelectronics, a leader in innovative semiconductor solutions. This robust N-channel FET delivers exceptional performance as an amplifier, ensuring high efficiency and reliability in ultra-high frequency environments. With superior thermal management and compact design, it’s perfect for demanding applications where quality and power matter most. Trust in STMicroelectronics to provide unmatched value and support for your electronic innovations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, ensuring longevity in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally offer better performance, providing higher efficiency and faster switching speeds compared to their P-channel counterparts.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces the number of components required, making it easier to implement in compact environments.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this FET effectively boosts signal strength, making it ideal for communication devices and audio equipment.

Surface Mount: YES

Being surface mount compatible allows for space-saving designs and efficient automated assembly, enhancing production speed and reducing costs.

Minimum DS Breakdown Voltage: 65 V

With a minimum breakdown voltage of 65V, this FET can handle higher voltages, making it suitable for demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient layout design on PCBs, optimizing space utilization.

Terminal Form: FLAT

Flat terminal form enables better thermal conductivity and improved heat dissipation during operation, which is crucial for high-performance applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors typically exhibit higher performance and efficiency in higher-speed applications due to their voltage-controlled operation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating effectively in the ultra high frequency band allows for applications in advanced communication systems, including wireless and telecommunications.

Maximum Drain Current (Abs): 7 A

A maximum drain current of 7A provides flexibility for various applications, ensuring that it can handle substantial load demands.

No. of Terminals: 2

Having only 2 terminals simplifies the design and makes it easier to integrate into circuits, enhancing ease of use.

Maximum Power Dissipation (Abs): 79 W

With a maximum power dissipation capability of 79W, this FET is suitable for high-power applications, ensuring efficient energy use and minimizing damage risk.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging offers robust mounting options, providing stability and reliable performance in diverse applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Employing MOS technology delivers high scalability and low power consumption, making it a preferred choice in modern electronic applications.

Maximum Operating Temperature: 165 °C

A high maximum operating temperature of 165 °C ensures reliability in extreme conditions, making it suitable for high-temperature environments.

Transistor Element Material: SILICON

Silicon material is widely used for its excellent electrical properties, making this FET robust and efficient in various conditions.

Maximum Drain Current (ID): 7 A

A repeat specification of 7A ensures consistent performance characteristics for reliable application in high-drain scenarios.

Terminal Position: DUAL

Dual terminal positioning allows for versatile circuit designs and can facilitate better connections in configurations.

Case Connection: SOURCE

Source case connection enhances thermal management and simplifies circuit layout, making it easier to integrate into systems.

Technical Specifications

RF Power Field Effect Transistors (FET) STAP57060 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

STAP57060 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 8