Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STAP57100 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 14 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its robust ceramic-metal sealed package ensures reliable performance up to 165 °C.
Median Price
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Vyrian
1+ parts
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Digiode
Anansix
IDEA Electronic Components Group
$0.287
$0.258
MKK Technologies
$0.540
DigiPath Technology Company
Corphita
Parana Technologies
$0.343
The durable ceramic and metal-sealed co-fired package provides excellent thermal management, enhancing reliability and performance in demanding applications.
N-channel FETs typically offer better performance and efficiency, making this product suitable for high-speed switching applications.
A single configuration simplifies circuit design and contributes to lower overall cost, making it ideal for various applications.
Designed specifically for amplification tasks, this FET ensures high gain and efficient power delivery, making it perfect for audio and RF applications.
Surface mount capability allows for more compact designs and automated assembly processes, enhancing production efficiency.
A minimum breakdown voltage of 65 V enables operation in high-voltage environments, providing flexibility in application.
The rectangular package shape facilitates easy integration into circuit boards, optimizing layout design and space utilization.
Flat terminals enhance solderability, ensuring reliable electrical connections in various mounting configurations.
Enhancement mode operation provides higher input impedance and lower power consumption, increasing overall circuit efficiency.
Capable of operating in the ultra high frequency range, this FET is ideal for applications in telecommunications and high-frequency RF circuits.
A maximum drain current of 14 A allows this FET to handle significant load requirements, making it suitable for high-power applications.
The 4-terminal design provides efficient connectivity options and versatility in circuit configurations.
With a high power dissipation rating, this FET can manage thermal stress effectively, ensuring long-term reliability under heavy load.
Flange mount style enhances mechanical stability and thermal performance, ideal for robust installations in demanding environments.
MOS technology enables high efficiency and fast switching capabilities, making this FET suitable for modern electronic applications.
A maximum operating temperature of 165 °C allows for reliable performance in high-temperature environments, suitable for industrial applications.
Silicon as the element material enhances durability and thermal stability, ensuring consistent performance across various conditions.
The capability to handle 14 A of drain current makes this FET suitable for high-speed switching in power applications.
Dual terminal position layout simplifies circuit connections and improves ease of use in various PCB designs.
Source case connection aids in efficient heat dissipation and facilitates straightforward integration into power circuits.
RF Power Field Effect Transistors (FET) STAP57100 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics
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STAP57100 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM107H
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
RC0603JR-070RL
Yageo
Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.
NE555D
STMicroelectronics
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LL4148
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
Semitron
RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;
Continental Device India
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
SMBJ18CA
Taiwan Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
LM7805CT
Silicon Group
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;
LM317T
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;
2N7002
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
Onsemi
CRG0805F10K
TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.
Nte Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
FDN306P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
BAV99
Infineon Technologies
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FT232RL-TUBE
FTDI
FTDI's FT232RL-TUBE is a bus controller with 28 terminals, operating at 3.3-5.25V. It supports USB, VBUS, and UART interfaces with a data transfer rate of 60MBps. Ideal for industrial applications requiring RS232/RS422/RS485 compatibility in compact designs due to its small outline package style.
934065655112
NXP Semiconductors
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
ART700FHU
Ampleon Netherlands B V
ART700FHU by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with 177V DS Breakdown Voltage, 26.8 dB Power Gain, and operates in the Ultra High Frequency Band. It is a COMMON SOURCE amplifier transistor with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-performance applications requiring a FLANGE MOUNT package style.
FLL177ME
Fujitsu Semiconductor America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: GALLIUM ARSENIDE;
MRF6V12250HR3
NXP Semiconductors' MRF6V12250HR3 is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 110 V. It operates in ENHANCEMENT MODE at the L BAND frequency, suitable for high-power applications. The package style is FLANGE MOUNT, making it ideal for surface mount configurations.
PD85025C
PD85025C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
MRF1517NT1
NXP Semiconductors' MRF1517NT1 is a single N-channel RF Power FET with 25V DS breakdown voltage and 4A max drain current. Ideal for amplifier applications in the UHF band, it operates in enhancement mode with a max power dissipation of 62.5W.
PD54008S-E-E
PD54008S-E-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
MRFE6VP100HSR5
N-CHANNEL; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD20010TR-E
PD20010TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the L band. This compact surface mount transistor ensures efficient performance up to 165 °C.
PD57070
PD57070 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
FLL57MK
Fujitsu
Fujitsu's FLL57MK is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, ideal for AMPLIFIER applications in L BAND. Featuring CERAMIC, METAL-SEALED COFIRED package and 21.4W power dissipation at 175°C, it offers reliable performance in DEPLETION MODE operation.
MRF1513T1
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): CHIP CARRIER;
A2T21H450W19SR6
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
BLF3G21-30,112
NXP Semiconductors' BLF3G21-30,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max Drain Current of 4.5A and operates in ENHANCEMENT MODE at up to 200°C.
AFG24S100HR5
A2T21S160-12SR3
A2T21S161W12SR3
MMRF1014NT1
Freescale Semiconductor
N-CHANNEL; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Terminal Position: QUAD; Terminal Finish: MATTE TIN;
ST36015
RF Power Field-Effect Transistors;
MRF141G
M/a-com Technology Solutions
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
STAP1011-180
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 800 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY;
STAP57030
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Terminal Position: DUAL; Package Body Material: PLASTIC/EPOXY;
STAP57045
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Maximum Operating Temperature: 165 Cel; Maximum Drain Current (ID): 5 A;
STAP57060
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Case Connection: SOURCE; Package Body Material: PLASTIC/EPOXY;
STAP85025
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; JESD-30 Code: R-PDFM-F2; No. of Terminals: 2;
STAP85025S
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
STAP85035
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Maximum Operating Temperature: 165 Cel; Minimum DS Breakdown Voltage: 40 V;
STAP85050
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 40 V;
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