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MRF1513T1

NXP Semiconductors

MRF1513T1 by NXP Semiconductors

NXP Semiconductors' MRF1513T1 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a max Drain Current of 2A, 31.2W Power Dissipation, and operates at up to 150°C temperature.

Median Price

$6.990

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,025 parts In-Stock

1+ parts

$6.990

100+ parts

$6.850

1k+ parts

$6.710

10k+ parts

-

2,025

$6.990

$6.850

$6.710

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Distributors (In-Stock)

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LIBRA Elektronik GmbH

Germany . 7,511 parts In-Stock

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7,511

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Digiode

USA . 2,821 parts In-Stock

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2,821

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Anansix

USA . 468 parts In-Stock

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468

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Vyrian

USA . 416 parts In-Stock

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416

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

1+ parts

$0.325

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-

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1,000

$0.325

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Corohmni

South Africa . 50 parts In-Stock

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$1.552

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50

$1.552

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AZTECH Wire

Italy . 208 parts In-Stock

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$18.772

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208

$18.772

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One Stop Electronics

USA . 550 parts In-Stock

1+ parts

$25.050

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550

$25.050

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Ampacity Inc.

Singapore . 184 parts In-Stock

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$62.050

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184

$62.050

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QUARKTWIN TECHNOLOGY LTD

USA . 6,588 parts In-Stock

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6,588

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Continental Prestige Electronics

USA . 3,687 parts In-Stock

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3,687

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UNI Independent Distributors

Spain . 2,730 parts In-Stock

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Corphita

USA . 1,960 parts In-Stock

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1,960

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Argo Parts USA

USA . 1,662 parts In-Stock

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1,662

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Enhance your amplifier applications with the NXP Semiconductors MRF1513T1 RF Power Field Effect Transistor. Manufactured with top-quality materials and cutting-edge technology, this N-CHANNEL transistor offers reliable performance in the ultra-high frequency band. With a maximum power dissipation of 31.2 W and a minimum DS breakdown voltage of 40V, this transistor provides exceptional value and benefits to customers looking for high-performance components. Say goodbye to outdated technology and upgrade to the MRF1513T1 for a superior amplifier experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have higher electron mobility and lower on-state resistance, making them more efficient for amplification applications.

Minimum DS Breakdown Voltage: 40 V

Allows for reliable operation at higher voltages without risking damage to the transistor.

Maximum Power Dissipation (Abs): 31.2 W

Can handle high power levels without overheating, ensuring stability and performance under heavy load conditions.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without experiencing degradation in performance, making it suitable for a wide range of applications.

Technical Specifications

RF Power Field Effect Transistors (FET) MRF1513T1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PQSO-N4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

NO LEAD

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF1513T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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