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CG2H40045P

Wolfspeed

CG2H40045P by Wolfspeed

CG2H40045P by Wolfspeed is an N-CHANNEL RF Power FET with 84V DS Breakdown Voltage. Featuring 15dB Power Gain, it operates in S BAND for AMPLIFIER applications. Utilizing GALLIUM NITRIDE tech, it has a max ID of 6A and can withstand temps from -40 to 150 °C.

Median Price

$177.227

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 57 parts In-Stock

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$177.227

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Vyrian

USA . 3,539 parts In-Stock

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3,539

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,938 parts In-Stock

1+ parts

$0.950

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AZTECH Wire

Italy . 453 parts In-Stock

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$16.084

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453

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Continental Prestige Electronics

USA . 348 parts In-Stock

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$177.227

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$173.683

348

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$173.683

Netroflash

USA . 100 parts In-Stock

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$177.227

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100

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Argo Parts USA

USA . 1,370 parts In-Stock

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Overview

In a world where quality and reliability are paramount, look no further than the CG2H40045P by Wolfspeed. As a leader in RF Power Field Effect Transistors (FET), Wolfspeed delivers cutting-edge technology with a focus on performance and innovation. Ideal for amplifier applications in the S Band, this N-CHANNEL transistor offers a minimum DS Breakdown Voltage of 84V and a Minimum Power Gain of 15dB. With a maximum operating temperature of 150°C and high electron mobility technology, the CG2H40045P provides customers with unparalleled value and benefits. Experience the difference with Wolfspeed today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures high thermal conductivity and durability, making this product ideal for high-power applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have higher electron mobilities, offering better performance compared to P-channel FETs. This makes this product a good choice for high-frequency applications.

Minimum Power Gain (Gp): 15 dB

With a minimum power gain of 15 dB, this FET provides efficient amplification of signals, making it suitable for use in RF amplifier circuits.

Operating Mode: DEPLETION MODE

Depletion mode FETs offer low ON-resistance and high input impedance, which can improve overall circuit efficiency and signal integrity.

Maximum Drain Current (ID): 6 A

The high maximum drain current of 6 A allows this FET to handle high power levels, making it suitable for high-power RF amplifier applications.

Technical Specifications

RF Power Field Effect Transistors (FET) CG2H40045P attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

84 V

Maximum Drain Current (ID):

6 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Maximum Feedback Capacitance (Crss):

.6 pF

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFP-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Minimum Power Gain (Gp):

15 dB

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

CG2H40045P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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