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A3T18H455W23SR6

NXP Semiconductors

A3T18H455W23SR6 by NXP Semiconductors

NXP Semiconductors A3T18H455W23SR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, 15dB Power Gain, and L BAND frequency. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE with a temperature range of -40 to 225 °C.

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VNN

France . 21,421 parts In-Stock

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Digiode

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Flip Electronics

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Nova Conductors

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Corohmni

South Africa . 1 parts In-Stock

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 665 parts In-Stock

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Microchip USA

USA . 2,915 parts In-Stock

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Overview

Enhance your amplifier applications with the A3T18H455W23SR6 RF Power Field Effect Transistor by NXP Semiconductors. Crafted with precision and reliability, this N-CHANNEL FET offers a complex configuration that ensures optimal performance in the L BAND frequency range. With a minimum DS Breakdown Voltage of 65V and a Power Gain of 15 dB, this transistor is designed to deliver unparalleled quality and efficiency. Upgrade your projects with this ceramic, metal-sealed co-fired package that guarantees long-lasting durability and exceptional results. Elevate your RF power amplification with the A3T18H455W23SR6 and experience the superior value it brings to your applications.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This durable and reliable material ensures the RF Power FET can withstand high temperatures and harsh conditions, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have higher electron mobility and better performance compared to P-Channel FETs, making this a good choice for an amplifier application.

Minimum DS Breakdown Voltage: 65 V

With a high minimum breakdown voltage, this RF Power FET can handle higher power levels without the risk of electrical breakdown.

Minimum Power Gain (Gp): 15 dB

A higher power gain indicates better amplification capabilities, making this FET suitable for applications where signal amplification is critical.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration into circuit boards, saving space and simplifying assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to control and have lower resistance, leading to better performance and efficiency in amplifier applications.

Maximum Operating Temperature: 225 °C

With a high maximum operating temperature, this RF Power FET can operate reliably in high-temperature environments without performance degradation.

Technical Specifications

RF Power Field Effect Transistors (FET) A3T18H455W23SR6 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CQFP-F6

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Minimum Power Gain (Gp):

15 dB

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

A3T18H455W23SR6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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