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A3T18H400W23SR6

NXP Semiconductors

A3T18H400W23SR6 by NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;

Median Price

$103.025

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 30 parts In-Stock

1+ parts

$109.000

100+ parts

-

1k+ parts

-

10k+ parts

-

30

$109.000

-

-

-

Verical

USA . 7 parts In-Stock

1+ parts

-

100+ parts

$97.050

1k+ parts

$97.050

10k+ parts

$97.050

7

-

$97.050

$97.050

$97.050

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,644 parts In-Stock

1+ parts

$103.550

100+ parts

-

1k+ parts

-

10k+ parts

-

3,644

$103.550

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-

-

Martec Srl

Italy . 68,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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68,850

-

-

-

-

Vyrian

USA . 4,224 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,224

-

-

-

-

Anansix

USA . 1,615 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

1,615

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 684 parts In-Stock

1+ parts

$0.373

100+ parts

-

1k+ parts

-

10k+ parts

$0.358

684

$0.373

-

-

$0.358

Northwest PG Solutions

USA . 1,370 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

$0.362

1,370

$0.410

-

-

$0.362

AZTECH Wire

Italy . 1,220 parts In-Stock

1+ parts

$11.520

100+ parts

-

1k+ parts

-

10k+ parts

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1,220

$11.520

-

-

-

Corphita

USA . 900 parts In-Stock

1+ parts

$98.100

100+ parts

-

1k+ parts

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10k+ parts

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900

$98.100

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-

-

Microchip USA

USA . 1,325 parts In-Stock

1+ parts

$200.884

100+ parts

-

1k+ parts

-

10k+ parts

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1,325

$200.884

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-

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UNI Independent Distributors

Spain . 2,253 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,253

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-

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-

Technical Specifications

RF Power Field Effect Transistors (FET) A3T18H400W23SR6 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CQFP-F6

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Minimum Power Gain (Gp):

16 dB

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

A3T18H400W23SR6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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