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COMPLEX RF Power Field Effect Transistors (FET) 6

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
A2T20H160W04NR3 by NXP Semiconductors

A2T20H160W04NR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY;

SOURCE

COMPLEX

65 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-PDFP-F4

e3

3

2

4

ENHANCEMENT MODE

225 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLATPACK

260

N-CHANNEL

16 dB

YES

TIN

FLAT

DUAL

40

AMPLIFIER

SILICON

A3T18H360W23SR6 by NXP Semiconductors

A3T18H360W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: QUAD; Minimum Operating Temperature: -40 Cel;

COMPLEX

65 V

METAL-OXIDE SEMICONDUCTOR

L BAND

R-CQFP-F6

2

6

ENHANCEMENT MODE

225 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

16 dB

YES

FLAT

QUAD

40

AMPLIFIER

SILICON

A3T18H400W23SR6 by NXP Semiconductors

A3T18H400W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;

COMPLEX

65 V

METAL-OXIDE SEMICONDUCTOR

L BAND

R-CQFP-F6

2

6

ENHANCEMENT MODE

225 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

16 dB

YES

FLAT

QUAD

40

AMPLIFIER

SILICON

A3T18H455W23SR6 by NXP Semiconductors

A3T18H455W23SR6

NXP Semiconductors

NXP Semiconductors A3T18H455W23SR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, 15dB Power Gain, and L BAND frequency. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE with a temperature range of -40 to 225 °C.

COMPLEX

65 V

METAL-OXIDE SEMICONDUCTOR

L BAND

R-CQFP-F6

2

6

ENHANCEMENT MODE

225 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

15 dB

YES

FLAT

QUAD

40

AMPLIFIER

SILICON

A3T21H450W23SR6 by NXP Semiconductors

A3T21H450W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Power Gain (Gp): 14.2 dB; Minimum Operating Temperature: -40 Cel;

COMPLEX

65 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-CQFP-F6

2

6

ENHANCEMENT MODE

225 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

14.2 dB

YES

FLAT

QUAD

40

AMPLIFIER

SILICON

A3T21H400W23SR6 by NXP Semiconductors

A3T21H400W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: FLAT; Maximum Operating Temperature: 225 Cel; Transistor Element Material: SILICON;

COMPLEX

65 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-CQFP-F6

2

6

ENHANCEMENT MODE

225 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

14.5 dB

YES

FLAT

QUAD

40

AMPLIFIER

SILICON