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A5G37H110NT4

NXP Semiconductors

A5G37H110NT4 by NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,519 parts In-Stock

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6,519

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Digiode

USA . 2,630 parts In-Stock

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2,630

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Anansix

USA . 478 parts In-Stock

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478

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Flip Electronics

USA . 110 parts In-Stock

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110

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 888 parts In-Stock

1+ parts

$0.085

100+ parts

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10k+ parts

$0.082

888

$0.085

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$0.082

Northwest PG Solutions

USA . 875 parts In-Stock

1+ parts

$0.094

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$0.082

875

$0.094

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$0.082

AZTECH Wire

Italy . 242 parts In-Stock

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$12.460

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242

$12.460

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Microchip USA

USA . 3,664 parts In-Stock

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$36.461

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3,664

$36.461

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One Stop Electronics

USA . 744 parts In-Stock

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$61.050

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744

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UNI Independent Distributors

Spain . 7,812 parts In-Stock

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Corphita

USA . 3,040 parts In-Stock

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3,040

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Technical Specifications

RF Power Field Effect Transistors (FET) A5G37H110NT4 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

125 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-N6

Moisture Sensitivity Level (MSL):

3

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Minimum Power Gain (Gp):

12 dB

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

A5G37H110NT4 Transistors trade compliance attributes, and parameters.

ECCN

3A001.B.3.A.4

ECCN Governance

EAR

HTS

8541.29.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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