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D1007UK

Tt Electronics Plc

D1007UK by Tt Electronics Plc

D1007UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, this transistor has a max operating temperature of 200°C and comes in a FLANGE MOUNT package style.

Median Price

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 451 parts In-Stock

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451

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Corohmni

South Africa . 350 parts In-Stock

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$0.878

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350

$0.878

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Aztec Data Supply Inc.

USA . 1,538 parts In-Stock

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$1.870

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1,538

$1.870

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AZTECH Wire

Italy . 392 parts In-Stock

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$6.109

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392

$6.109

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Ampacity Inc.

Singapore . 741 parts In-Stock

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$26.050

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741

$26.050

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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5,880

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Continental Prestige Electronics

USA . 4,607 parts In-Stock

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4,607

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Argo Parts USA

USA . 4,233 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the D1007UK from Tt Electronics Plc. Crafted with precision and excellence, this RF Power Field Effect Transistor offers unparalleled performance and reliability in amplifier applications. Its N-CHANNEL design and COMMON SOURCE configuration deliver superior functionality in the ULTRA HIGH FREQUENCY BAND. With a minimum DS Breakdown Voltage of 70V and a maximum operating temperature of 200°C, this transistor sets the standard for quality and durability. Experience the difference with Tt Electronics Plc and elevate your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired body material provides excellent durability and reliability, making this product suitable for long-term use in various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and efficiency than P-channel transistors, making this product a good choice for high-performance applications.

Configuration: COMMON SOURCE, 2 ELEMENTS

The common source configuration with 2 elements allows for easy integration into amplifier circuits, providing consistent and reliable performance.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this product offers high power output and efficiency, making it ideal for use in RF power amplifiers.

Surface Mount: YES

Surface mount compatibility allows for easy installation on PCBs, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 70 V

With a minimum breakdown voltage of 70 V, this transistor can handle high voltage levels with ease, ensuring reliable operation in demanding conditions.

Package Shape: RECTANGULAR

The rectangular package shape maximizes space efficiency and allows for easy placement on circuit boards, enhancing overall system design.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its high performance and reliability, making this product a dependable choice for RF power applications.

Technical Specifications

RF Power Field Effect Transistors (FET) D1007UK attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Tt Electronics Plc

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

70 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F4

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

D1007UK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Tt Electronics Plc

Our primary focus areas for growth and investment are in the end markets of healthcare, aerospace & defence, and automation & electrification which includes products that address resource scarcity, improve energy efficiency, support renewables and drive productivity, connectivity and health.

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