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D1002UK

Tt Electronics Plc

D1002UK by Tt Electronics Plc

D1002UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 70V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR transistor has a max temp of 200°C and features a CERAMIC, METAL-SEALED COFIRED package body.

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 596 parts In-Stock

1+ parts

$59.050

100+ parts

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596

$59.050

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Netroflash

USA . 50 parts In-Stock

1+ parts

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10k+ parts

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50

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Overview

Unleash the power of cutting-edge technology with the D1002UK RF Power Field Effect Transistor by Tt Electronics Plc. Crafted with precision and expertise, this N-CHANNEL amplifier offers unparalleled performance in the ultra-high frequency band. Its ceramic, metal-sealed co-fired package ensures durability and reliability, making it ideal for a wide range of applications. Elevate your projects with the superior quality and innovation that only Tt Electronics Plc can provide. Experience the difference today and revolutionize your electronics with the D1002UK.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures high durability and reliability, making the product suitable for demanding applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors generally have better performance characteristics compared to P-Channel transistors, making this product a good choice for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the design and integration process, making it easier to incorporate this transistor into various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Minimum DS Breakdown Voltage: 70 V

High breakdown voltage ensures reliable operation and protection against voltage spikes or surges.

Package Shape: ROUND

Round package shape provides efficient heat dissipation and compact design for space-constrained applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers better control over the transistor's on/off state, improving overall efficiency in signal amplification.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed to operate in ultra-high frequency bands, making it suitable for advanced communication and signal processing systems.

No. of Terminals: 4

With 4 terminals, this transistor offers versatile connectivity options and can be easily integrated into various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount package style ensures secure mounting and easy connection in amplifier systems, enhancing overall reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low power consumption, and enhanced reliability in amplifier applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand high temperatures in demanding environments without compromising performance.

Transistor Element Material: SILICON

Silicon-based transistor element material provides excellent performance characteristics, ensuring stable and efficient operation in amplifier applications.

Terminal Finish: GOLD

Gold terminal finish offers superior conductivity and corrosion resistance, ensuring long-term reliability and optimal signal transmission.

Terminal Position: RADIAL

Radial terminal position provides easy and secure connection, ensuring stable operation in amplifier circuits.

Case Connection: SOURCE

Source case connection simplifies circuit integration and enhances signal stability in amplifier applications.

Technical Specifications

RF Power Field Effect Transistors (FET) D1002UK attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Tt Electronics Plc

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

70 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

D1002UK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Tt Electronics Plc

Our primary focus areas for growth and investment are in the end markets of healthcare, aerospace & defence, and automation & electrification which includes products that address resource scarcity, improve energy efficiency, support renewables and drive productivity, connectivity and health.

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