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LET9150

STMicroelectronics

LET9150 by STMicroelectronics

LET9150 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, breakdown voltage of 80 V, and operates in the L band. Ideal for high-power amplification with a compact surface mount design.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,231 parts In-Stock

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8,231

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Digiode

USA . 2,884 parts In-Stock

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2,884

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Anansix

USA . 642 parts In-Stock

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642

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,194 parts In-Stock

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$1.415

100+ parts

-

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$1.273

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2,194

$1.415

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$1.273

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MKK Technologies

India . 422 parts In-Stock

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$2.661

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422

$2.661

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DigiPath Technology Company

USA . 422 parts In-Stock

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$2.661

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422

$2.661

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AZTECH Wire

Italy . 213 parts In-Stock

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$8.990

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213

$8.990

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Component Stockers USA

USA . 444 parts In-Stock

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$99.990

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444

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 15,567 parts In-Stock

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Parana Technologies

USA . 2,029 parts In-Stock

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$1.692

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2,029

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$1.692

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Corphita

USA . 151 parts In-Stock

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Perfect Parts

USA . 53 parts In-Stock

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Overview

Unlock unparalleled performance with the LET9150 from STMicroelectronics, a leader in semiconductor innovation. This N-channel RF Power FET excels in amplifier applications, delivering exceptional efficiency and robustness for your designs. With an impressive power dissipation capacity and enhanced operational reliability, it’s perfect for demanding environments. Trust STMicroelectronics’ quality to elevate your projects, ensuring durability and peak performance across various industrial applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and protection against environmental factors, contributing to the reliability of the FET in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are typically more efficient than their P-channel counterparts, allowing for better performance in amplification and switching applications.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it easier to use in various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, this FET ensures high performance and efficiency in audio and RF applications.

Surface Mount: YES

Surface mount technology allows for smaller and lighter designs, facilitating compact circuit designs and improving manufacturing efficiency.

Minimum DS Breakdown Voltage: 80 V

A breakdown voltage of 80 V enables the FET to handle higher voltages safely, making it suitable for robust applications.

Package Shape: RECTANGULAR

The rectangular shape is advantageous for PCB layout and space optimization, making circuit design more efficient.

Terminal Form: FLAT

Flat terminals ensure better contact and connectivity with the PCB, enhancing overall performance and stability in electronic designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for effective switching and amplification capabilities, making it ideal for diverse applications.

Highest Frequency Band: L BAND

The L band frequency capability makes it suitable for telecommunications and radar applications, ensuring efficient signal handling.

Maximum Drain Current (Abs) (ID): 20 A

A maximum drain current of 20 A provides the flexibility for applications requiring significant power handling without compromising performance.

No. of Terminals: 4

The four-terminal design enables more sophisticated circuit configurations and easier connections in a variety of applications.

Maximum Power Dissipation (Abs): 269 W

High power dissipation capability allows for better thermal management and higher efficiency in power-intensive applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides enhanced mechanical stability and heat dissipation, which is critical for high-performance applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high speed and low power consumption, making this FET ideal for modern electronic systems.

Maximum Operating Temperature: 200 °C

A maximum operating temperature of 200 °C ensures the FET can perform effectively in high-temperature environments, increasing its versatility.

Transistor Element Material: SILICON

Silicon is a widely used material known for its efficiency and reliability in semiconductor components, ensuring robust performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, contributing to the durability of the device.

Maximum Drain Current (ID): 20 A

The repeated mention of a maximum drain current of 20 A reinforces its robust performance for power applications.

Terminal Position: DUAL

Dual terminal positioning allows for easier layout in circuit designs, ensuring optimal performance and reduced interference.

Case Connection: SOURCE

This connection design simplifies circuit architectures and ensures efficient current flow and heat distribution.

Technical Specifications

RF Power Field Effect Transistors (FET) LET9150 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDFM-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

LET9150 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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