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LET9045STR

STMicroelectronics

LET9045STR by STMicroelectronics

LET9045STR by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 5A Drain Current and 160W Power Dissipation. Ideal for small outline packages requiring high power handling capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,797 parts In-Stock

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7,797

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Anansix

USA . 1,447 parts In-Stock

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1,447

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Digiode

USA . 645 parts In-Stock

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645

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Nova Conductors

Japan . 18 parts In-Stock

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18

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 118 parts In-Stock

1+ parts

$1.412

100+ parts

-

1k+ parts

$1.271

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118

$1.412

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$1.271

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MKK Technologies

India . 1,501 parts In-Stock

1+ parts

$2.656

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1,501

$2.656

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DigiPath Technology Company

USA . 1,501 parts In-Stock

1+ parts

$2.656

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1,501

$2.656

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AZTECH Wire

Italy . 268 parts In-Stock

1+ parts

$7.527

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268

$7.527

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Ampacity Inc.

Singapore . 993 parts In-Stock

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$18.050

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993

$18.050

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Component Stockers USA

USA . 795 parts In-Stock

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$99.990

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795

$99.990

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Continental Prestige Electronics

USA . 4,370 parts In-Stock

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4,370

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Corphita

USA . 3,180 parts In-Stock

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Argo Parts USA

USA . 3,157 parts In-Stock

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Parana Technologies

USA . 1,028 parts In-Stock

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$1.688

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1,028

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$1.688

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unlock the power of RF amplification with the LET9045STR by STMicroelectronics. Crafted with precision and expertise, this N-CHANNEL FET offers unparalleled performance in the ultra-high-frequency band. Ideal for amplifier applications, this enhancement mode transistor boasts a 160W maximum power dissipation and 9A maximum drain current, ensuring reliable and efficient operation. With its small outline package and matte tin terminal finish, this transistor is designed for easy integration and long-term durability. Experience the superior quality and cutting-edge technology of STMicroelectronics with the LET9045STR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher electron mobility and conductivity, leading to better overall performance.

Configuration: SINGLE

Simplifies circuit designs and reduces complexity in system integration.

Transistor Application: AMPLIFIER

Ideal for applications requiring signal amplification, such as in communication systems or audio equipment.

Surface Mount: YES

Enables easy integration onto PCBs, saving space and facilitating automated manufacturing processes.

Minimum DS Breakdown Voltage: 80 V

Can handle high voltage levels, ensuring safe operation in various applications.

Package Shape: RECTANGULAR

Allows for compact placement on circuit boards, optimizing board space usage.

Operating Mode: ENHANCEMENT MODE

Offers better control over the transistor's conductance and enhances efficiency in switching applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications such as radar, satellite communication, and advanced wireless systems.

Maximum Drain Current (Abs) (ID): 5 A

Capable of handling moderate current levels, making it suitable for small to medium power applications.

No. of Terminals: 2

Simplifies the connection process and reduces the likelihood of errors during installation.

Maximum Power Dissipation (Abs): 160 W

Can handle high power levels without overheating, ensuring reliable performance under demanding conditions.

Package Style (Meter): SMALL OUTLINE

Offers a compact form factor and easy installation, suitable for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high efficiency and reliability in switching applications, improving overall system performance.

Maximum Operating Temperature: 165 °C

Can operate efficiently in high-temperature environments, expanding the range of applications where the product can be used.

Transistor Element Material: SILICON

Known for its high thermal conductivity and electrical properties, ensuring consistent performance over a wide temperature range.

Terminal Finish: Matte Tin (Sn) - annealed

Enhances solderability and ensures a reliable electrical connection, facilitating easy assembly and maintenance.

Maximum Drain Current (ID): 9 A

Capable of handling higher current levels, suitable for applications requiring more power output.

Terminal Position: DUAL

Offering flexibility in circuit design and ease of connection, enabling versatile applications.

Moisture Sensitivity Level (MSL): 3

Indicates resistance to moisture-related issues, ensuring long-term reliability in various operating conditions.

Case Connection: SOURCE

Helps improve thermal management and reduces the risk of overheating, enhancing overall product reliability.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly, reducing the risk of solder joint failures and ensuring product longevity.

Peak Reflow Temperature °C: 250

Suitable for lead-free soldering processes, complying with modern environmental regulations and manufacturing standards.

Technical Specifications

RF Power Field Effect Transistors (FET) LET9045STR attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

9 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

250

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

LET9045STR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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