Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2; Maximum Drain Current (ID): 9 A;
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RF Power Field Effect Transistors (FET) 934056519135 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors
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934056519135 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
FDD5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
2N2222A
Silicon Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
SMBJ18CA
Daco Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358DR2G
Onsemi
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
LM7805CT
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Dc Components
LM317AEMP/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: SOP; Terminal Form: GULL WING; Qualification Status: Not Qualified; Width: 3.56 mm;
B340A-13-F
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20Z+T&R
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY;
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
M85049/85-08W02
TE Connectivity
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;
2N7002
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;
SS14
Rfe International
LD1117S33CTR
STMicroelectronics
STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.
DS18B20U+
Analog Devices
DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
1N4148WS
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
PD54008
STMicroelectronics PD54008 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 5A Drain Current. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a GULL WING terminal form, SMALL OUTLINE package style, and can handle up to 73W power dissipation at 165 °C.
AFT09MS031NR1
NXP Semiconductors
AFT09MS031NR1 by NXP is an N-CHANNEL RF Power FET with 317W power dissipation. It operates at a max temp of 150°C, ideal for high-power RF applications. With surface mount capability and MSL level 3, it offers efficient performance in various electronic devices.
TRF7003PK
Texas Instruments
TRF7003PK by Texas Instruments is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a max drain current of 2A and breakdown voltage of 15V. Ideal for ultra-high frequency bands, it features a small outline package and can withstand temperatures up to 85°C.
CGHV96130F
Wolfspeed
RF Power Field-Effect Transistors;
LET20045C
LET20045C by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications in L BAND frequency range. With 12A Drain Current and 130W Power Dissipation, it's a high-performance transistor suitable for various RF power amplification needs.
MRFE6VP6300HR3
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Peak Reflow Temperature (C): 260; Case Connection: SOURCE;
CGHV59350F
CGHV59350F by Wolfspeed is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V and a Power Gain of 11.5 dB, ideal for amplifier applications in the C BAND frequency range. This HIGH ELECTRON MOBILITY transistor operates in DEPLETION MODE, with a max Drain Current of 24A and can withstand temperatures from -40 to 125 °C.
PTFA091201EV4R250XTMA1
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
PD60004S
PD60004S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in enhancement mode, and supports L band frequencies. Its compact SO package ensures efficient surface mounting.
MMRF1014NT1
N-CHANNEL; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Terminal Position: QUAD; Terminal Finish: MATTE TIN;
SD2903
SD2903 by STMicroelectronics is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, with a max Drain Current of 5A. This transistor is commonly used as an amplifier in applications requiring high-frequency performance and power amplification.
PD55015S
PD55015S by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 5A and a max power dissipation of 73W.
A2T18S260W12NR3
RF Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
MRF9045
Motorola
MRF9045 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, suitable for amplifier applications. With a max power dissipation of 125W and operating temperature up to 200°C, it features a ceramic-metal-sealed co-fired package ideal for flange mount installations.
PD55008STR-E
PD55008STR-E by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 4A and a max power dissipation of 52.8W.
MRF1517NT1
NXP Semiconductors' MRF1517NT1 is a single N-channel RF Power FET with 25V DS breakdown voltage and 4A max drain current. Ideal for amplifier applications in the UHF band, it operates in enhancement mode with a max power dissipation of 62.5W.
PTFA220041MV4
Infineon Technologies
PTFA220041MV4 by Infineon is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the S BAND frequency range and has a max temperature of 200°C. Ideal for amplifier applications, this transistor is surface mountable and features a plastic/epoxy package body.
SD60030
SD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in enhancement mode, and supports L-band frequencies. This surface-mount transistor ensures high performance up to 200 °C.
CGHV37400F
LET21030C
LET21030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the S band. This surface-mount transistor ensures efficient performance up to 200 °C.
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934066857112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Highest Frequency Band: L BAND; Terminal Form: FLAT;
934006620114
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: HIGH RELIABILITY; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
934055939112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 65 V;
934045520115
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
934055916112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;
934031850112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 125 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER;
934056375112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 2.2 A; No. of Terminals: 2;
934002430112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER; No. of Terminals: 4;
934006630112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F4;
934055383112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL; Peak Reflow Temperature (C): NOT SPECIFIED;
934055384112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 4.5 A; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFM-F2;
934055708135
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 2.2 A;
934006660112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 6;
934055916135
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
934006620112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Additional Features: HIGH RELIABILITY; Maximum Drain Current (ID): 15 A;
934055384135
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
934045520114
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 1.5 A;
934001090112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 8; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
934003520112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 65 V; Terminal Position: DUAL;
934006640112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Style (Meter): FLANGE MOUNT;
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