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QPD1008L

Qorvo

QPD1008L by Qorvo

Qorvo's QPD1008L is a single N-channel RF FET with GaN technology, operating in S band. It features a ceramic-metal sealed co-fired package for high electron mobility, suitable for amplifier applications. With a max temperature of 85°C and dual terminal position, it offers reliable performance in various environments.

Median Price

$363.020

Lifecycle Status

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< 1k

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RFMW

USA . 25 parts In-Stock

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$242.010

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25

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DigiKey

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$363.020

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Nova Conductors

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870

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22

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AZTECH Wire

Italy . 841 parts In-Stock

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Continental Prestige Electronics

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$244.260

3,559

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$244.260

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Argo Parts USA

USA . 898 parts In-Stock

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898

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Overview

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal conductivity and high reliability, making the transistor suitable for high power applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and lower off-state leakage current, resulting in better performance and efficiency.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal signal amplification and reliable performance.

Surface Mount: YES

Allows for easy and efficient PCB assembly, reducing production costs and saving space.

Package Shape: RECTANGULAR

Rectangular shape provides better thermal dissipation and allows for efficient heat transfer, improving overall performance.

Operating Mode: DEPLETION MODE

Depletion mode transistors offer higher efficiency and better linearity, making them ideal for high-frequency applications.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

High electron mobility technology enables faster switching speeds and lower on-state resistance, resulting in better performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this transistor can withstand high temperatures and operate reliably in demanding environments.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this transistor can operate efficiently in a wide range of temperature conditions.

Transistor Element Material: GALLIUM NITRIDE

Gallium Nitride is known for its high electron mobility and excellent thermal conductivity, making it suitable for high-frequency and high-power applications.

Technical Specifications

RF Power Field Effect Transistors (FET) QPD1008L attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Qorvo

Specs

Case Connection:

SOURCE

Configuration:

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

QPD1008L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Qorvo

Your car. Your smartphone. Your wrist. Your heart. Even outer space. Qorvo products are at work connecting, protecting and powering the planet. We bring core radio frequency (RF) and power technologies and solutions to mobile, infrastructure, the IoT, defense/aerospace and power management markets. Transforming the way you live, work, play and communicate — that's what inspires us. Innovation. Product Leadership. Scale. Speed. At Qorvo, we are driven by the possibility of discovery — of new RF and power technologies and advancements in design, manufacturing and communications that make the world a better, cleaner and more connected place. We've been working on that for more than 30 years, both as innovators and as stewards of our planet. And we are just getting started.

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