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A2G26H281-04SR3

NXP Semiconductors

A2G26H281-04SR3 by NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-CDFP-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

Median Price

$90.520

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 18 parts In-Stock

1+ parts

-

100+ parts

$90.520

1k+ parts

$80.990

10k+ parts

$76.220

18

-

$90.520

$80.990

$76.220

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,907 parts In-Stock

1+ parts

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5,907

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Digiode

USA . 3,846 parts In-Stock

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3,846

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Anansix

USA . 2,283 parts In-Stock

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2,283

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Flip Electronics

USA . 18 parts In-Stock

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18

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 783 parts In-Stock

1+ parts

$0.547

100+ parts

-

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783

$0.547

-

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Northwest PG Solutions

USA . 873 parts In-Stock

1+ parts

$0.601

100+ parts

-

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873

$0.601

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One Stop Electronics

USA . 640 parts In-Stock

1+ parts

$7.050

100+ parts

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640

$7.050

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AZTECH Wire

Italy . 508 parts In-Stock

1+ parts

$12.290

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508

$12.290

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Microchip USA

USA . 7,959 parts In-Stock

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$163.325

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7,959

$163.325

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Corphita

USA . 4,544 parts In-Stock

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UNI Independent Distributors

Spain . 730 parts In-Stock

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730

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Technical Specifications

RF Power Field Effect Transistors (FET) A2G26H281-04SR3 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

150 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFP-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

225 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Minimum Power Gain (Gp):

12.9 dB

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

A2G26H281-04SR3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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