Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Reference Standard: IEC-60134; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .3 ohm;
Median Price
$65.000
Lifecycle Status
Suppliers In-Stock
12
In-Stock Inventory
1k+
Farnell
1+ parts
$50.870
100+ parts
$41.030
1k+ parts
$39.520
10k+ parts
-
RFMW
Rochester
$91.030
$85.570
$80.110
DigiKey
Digiode
$48.326
Nova Conductors
$69.350
Vyrian
Anansix
VNN
Chip Stock
Manotoh
Cyclops Electronics Ltd
Aztec Data Supply Inc.
$1.276
Semicontronic
$43.240
$42.159
$41.943
Corphita
$45.783
Continental Prestige Electronics
Aranea Global
$67.963
$65.244
Lixinc
Robosynatics
$0.846
$0.828
Lucentia Tech
UNI Independent Distributors
Alle Elektronik GmbH
Authorized Procurement Solutions
Argo Parts USA
Perfect Parts
Futuretech Components
Kepictronics
Assy Fe
RF Power Field Effect Transistors (FET) BLF177 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Ampleon Netherlands B V
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
BLF177 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
The Leading Global Partner in RF Power Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership. The company envisions to make the world a better place through innovation in high frequency applications based on the advanced GaN and LDMOS technologies. Ampleon has more than 1,600 employees worldwide, dedicated to enable their customers to be successful with RF Power products through close cooperation and partnership, innovation, and excellent execution. Its innovative, yet consistent portfolio offers products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio applications.
1N4148W-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Molex
CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;
2N2222A
Telcom Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SMMBT3904LT1G
Onsemi
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
BSS138
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
OPA2277UA/2K5
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
MBR0520LT3G
MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.
DP83848IVVX/NOPB
Texas Instruments
Texas Instruments DP83848IVVX/NOPB is a 3.3V Ethernet transceiver with 100000 Mbps data rate, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and comes in a low profile flatpack package with matte tin finish.
M24308/2-1F
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
RC0402FR-0710KL
Yageo
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
SMBJ18CA
Rectron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;
Zowie Technology
1N4148
Digitron Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Philips Components
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
AFT05MS006NT1
NXP Semiconductors
RF Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
A2T26H160-24SR3
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
BLF278
New Jersey Semiconductor Products
N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 18 A; No. of Elements: 2; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
ST36015
RF Power Field-Effect Transistors;
MRF134
Tyco Electronics M/a-com
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 4; Terminal Form: FLAT; No. of Elements: 1;
BLF574
The NXP Semiconductors BLF574 is an RF Power FET with a common source configuration and 2 elements. Operating in the ultra high frequency band, it has a max drain current of 56A and operates in enhancement mode. Ideal for amplifier applications, this transistor features a ceramic-metal sealed co-fired package body material and can withstand temperatures up to 225°C.
934065978112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;
SD56150
SD56150 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 17 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in various electronic devices.
MW6S004NT1
Freescale Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
CLF1G0035-100
Ampleon Netherlands B V
MRF151A
M/a-com Technology Solutions
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Form: FLAT; Maximum Drain Current (ID): 16 A;
SD2941-10
SD2941-10 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 130 V, and can dissipate up to 389 W. Ideal for high-performance amplification in communication systems.
STAC4933
STAC4933 by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in single configuration.
SD2902
SD2902 by STMicroelectronics is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring a max Drain Current of 2.5A, this METAL-OXIDE SEMICONDUCTOR FET has a PLASTIC/EPOXY package and can withstand temperatures up to 200 °C.
MRF5P21180
Motorola
MRF5P21180 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, operating in S BAND. It has a power dissipation of 437.5W and operates at up to 200°C. Commonly used as an amplifier in high-frequency applications due to its dual-element configuration and metal-oxide semiconductor technology.
934064592112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; No. of Elements: 1;
ARF463AP1G
Microchip Technology
Microchip Technology's ARF463AP1G is a N-CHANNEL RF Power FET with 500V DS Breakdown Voltage. Ideal for amplifier applications in the VHF band, it offers 9A Drain Current and 180W Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150°C, featuring a SOURCE case connection.
934065231112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON;
AFG24S100HR5
A2T18H160-24SR3
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
BLF177
Asi Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 16 A; Maximum Drain Current (Abs) (ID): 16 A;
N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;
BLF177 by NXP Semiconductors is a single N-channel RF Power FET with 125V DS breakdown voltage, suitable for amplifier applications in the VHF band. It features a max drain current of 16A, power dissipation of 220W, and operates in enhancement mode. The package is ceramic-metal sealed co-fired with flange mount style and radial terminal position.
BLF175
N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 125 V; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Drain Current (ID): 4 A;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Power Dissipation Ambient: 68 W; Minimum DS Breakdown Voltage: 125 V;
BLF177,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 14 pF; No. of Terminals: 4; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;
BLF175,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Additional Features: HIGH RELIABILITY; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
BLF178XR,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Minimum DS Breakdown Voltage: 110 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
BLF178XRS,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;
BLF147
N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Terminal Form: FLAT;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Case Connection: ISOLATED; No. of Terminals: 4;
P1db
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; JESD-30 Code: O-CRFM-F4; Operating Mode: ENHANCEMENT MODE;
BLF10H6600P
BLF10M6LS200
BLF1046,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): 4.5 A; Maximum Operating Temperature: 200 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLF10H6600PS
BLF147,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Transistor Element Material: SILICON; Reference Standard: IEC-60134;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved