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PD85004

STMicroelectronics

PD85004 by STMicroelectronics

STMicroelectronics PD85004 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2A Drain Current. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a plastic/epoxy package, flat terminals, and can handle up to 6W power dissipation at 150°C.

Median Price

$2.783

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 93 parts In-Stock

1+ parts

$2.783

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93

$2.783

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Vyrian

USA . 2,213 parts In-Stock

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2,213

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Chip Stock

USA . 981 parts In-Stock

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981

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Digiode

USA . 896 parts In-Stock

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896

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Anansix

USA . 517 parts In-Stock

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517

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,933 parts In-Stock

1+ parts

$0.590

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-

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1,933

$0.590

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IDEA Electronic Components Group

UK . 380 parts In-Stock

1+ parts

$0.643

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-

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$0.579

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380

$0.643

-

$0.579

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MKK Technologies

India . 1,059 parts In-Stock

1+ parts

$1.209

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-

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1,059

$1.209

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DigiPath Technology Company

USA . 1,059 parts In-Stock

1+ parts

$1.209

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1,059

$1.209

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Corohmni

South Africa . 129 parts In-Stock

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$1.783

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129

$1.783

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$2.055

100+ parts

$1.952

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$1.952

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2,500

$2.055

$1.952

$1.952

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$2.727

100+ parts

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$2.618

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1,000

$2.727

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$2.618

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Continental Prestige Electronics

USA . 5,631 parts In-Stock

1+ parts

$2.783

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$2.727

5,631

$2.783

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$2.727

Argo Parts USA

USA . 140 parts In-Stock

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$2.783

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140

$2.783

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AZTECH Wire

Italy . 600 parts In-Stock

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$16.257

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600

$16.257

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Semicontronic

India . 1,407 parts In-Stock

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$62.050

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$60.499

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$60.188

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1,407

$62.050

$60.499

$60.188

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Ampacity Inc.

Singapore . 251 parts In-Stock

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$62.050

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251

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Perfect Parts

USA . 12,387 parts In-Stock

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Lixinc

USA . 8,230 parts In-Stock

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Corphita

USA . 4,169 parts In-Stock

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4,169

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Parana Technologies

USA . 365 parts In-Stock

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$0.769

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365

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$0.769

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Robosynatics

Brazil . 10 parts In-Stock

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10

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Lucentia Tech

USA . 10 parts In-Stock

1+ parts

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$0.049

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$0.049

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$0.049

10

-

$0.049

$0.049

$0.049

Overview

Unleash the power of cutting-edge technology with the STMicroelectronics PD85004 RF Power Field Effect Transistor. Crafted by a renowned manufacturer, this N-CHANNEL transistor offers unparalleled performance in amplifier applications within the ultra high frequency band. With a robust construction and a small outline package design, it delivers exceptional reliability and efficiency. Elevate your projects with the PD85004 and experience the value of superior quality and innovation that only STMicroelectronics can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance between durability and cost, making the product suitable for a wide range of applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically have better performance and efficiency compared to P-CHANNEL transistors, making this product a good choice for high-frequency applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplifying signals.

Surface Mount: YES

Surface mount capability makes installation easier and allows for more compact designs, saving space in electronic devices.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40V, this transistor can handle higher voltages, making it suitable for a variety of power applications.

Maximum Drain Current (ID): 2 A

Capable of handling a maximum drain current of 2A, allowing for efficient power delivery and performance.

Maximum Power Dissipation (Abs): 6 W

With a maximum power dissipation of 6W, this transistor can handle high power levels while maintaining stability and reliability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can operate reliably in high-temperature environments.

Technical Specifications

RF Power Field Effect Transistors (FET) PD85004 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

6 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD85004 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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