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PD85006L-E

STMicroelectronics

PD85006L-E by STMicroelectronics

PD85006L-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount device ensures efficient performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,915 parts In-Stock

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7,915

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Digiode

USA . 4,060 parts In-Stock

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4,060

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Anansix

USA . 445 parts In-Stock

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445

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,458 parts In-Stock

1+ parts

$0.954

100+ parts

-

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$0.859

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1,458

$0.954

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$0.859

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MKK Technologies

India . 1,525 parts In-Stock

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$1.794

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1,525

$1.794

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DigiPath Technology Company

USA . 1,525 parts In-Stock

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$1.794

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1,525

$1.794

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Andel Nordic

Denmark . 3,553 parts In-Stock

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$7.836

100+ parts

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$7.523

10k+ parts

$7.523

3,553

$7.836

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$7.523

$7.523

AZTECH Wire

Italy . 539 parts In-Stock

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$17.940

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539

$17.940

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Component Stockers USA

USA . 281 parts In-Stock

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$99.990

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281

$99.990

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Perfect Parts

USA . 6,657 parts In-Stock

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6,657

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Parana Technologies

USA . 654 parts In-Stock

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$1.141

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654

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$1.141

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Corphita

USA . 262 parts In-Stock

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Overview

Unlock unparalleled performance with the PD85006L-E from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for ultra-high frequency applications, this N-channel RF Power FET delivers exceptional efficiency and reliability, making it ideal for amplifiers in diverse industries—from telecommunications to consumer electronics. With a compact design and robust power handling capabilities, elevate your projects and experience cutting-edge technology that drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and reliability, making it suitable for harsh environments.

Polarity or Channel Type: N-CHANNEL

N-channel FETs offer lower ON resistance and higher efficiency, making them ideal for applications requiring higher performance.

Configuration: SINGLE

A single configuration simplifies design and integration in circuits, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Designed for amplification, this transistor is ideal for enhancing signal strength in communication and broadcast applications.

Surface Mount: YES

Surface mount capability allows for smaller circuit designs and automated assembly, increasing production efficiency.

Minimum DS Breakdown Voltage: 40 V

A high breakdown voltage of 40 V provides robustness, supporting applications in high-voltage environments without failure.

Package Shape: SQUARE

The square package shape aids in efficient space utilization on PCBs, optimizing layout and component density.

Terminal Form: NO LEAD

No lead design enhances thermal performance and reduces inductance, advantageous for high-frequency applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures that the transistor remains off until a voltage is applied, providing better control in circuits.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for ultra high frequency, this transistor excels in high-speed switching applications such as RF communication.

Maximum Drain Current (Abs) (ID): 2 A

With a maximum drain current rating of 2 A, this FET can handle substantial load without performance degradation.

No. of Terminals: 5

Five terminals allow for versatile connections in circuit designs, accommodating various configurations and functions.

Maximum Power Dissipation (Abs): 20.8 W

A power dissipation rating of 20.8 W indicates the transistor can manage heat effectively in high-power applications.

Package Style (Meter): CHIP CARRIER

The chip carrier package style is optimized for high-density mounting and low thermal resistance, enhancing overall performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures low power consumption and high input impedance, making it ideal for modern electronic circuits.

Maximum Operating Temperature: 150 °C

The capability to operate at temperatures up to 150 °C ensures reliability in high-temperature environments.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and is widely used in FETs for its favorable characteristics.

Maximum Drain Current (ID): 2 A

Duplicated specification reaffirms the transistor's capability to handle significant current loads reliably.

Terminal Position: QUAD

Quad terminal positioning provides flexibility in layout and enables efficient circuit design.

Case Connection: SOURCE

Having the source connection in a well-defined configuration promotes stability and ease of use in circuit applications.

Technical Specifications

RF Power Field Effect Transistors (FET) PD85006L-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

S-PQCC-N5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD85006L-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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