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NPT1012B

M/a-com Technology Solutions

NPT1012B by M/a-com Technology Solutions

NPT1012B by M/a-com is an RF Power FET with a 100V DS breakdown voltage, operating in depletion mode for amplifier applications. It features N-channel configuration, GaN element material, and operates in S band frequency range. The transistor is designed for surface mount with a ceramic-metal sealed co-fired package body ideal for high electron mobility technology.

Median Price

$182.340

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Mouser Electronics

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Nova Conductors

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Vyrian

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AZTECH Wire

Italy . 372 parts In-Stock

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Continental Prestige Electronics

USA . 3,167 parts In-Stock

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$175.606

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Netroflash

USA . 2,000 parts In-Stock

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Microchip USA

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Argo Parts USA

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Overview

Elevate your RF power amplifier designs with the NPT1012B by M/a-com Technology Solutions. This single-channel N-CHANNEL FET offers high electron mobility technology and operates in depletion mode, making it perfect for S Band applications. With a minimum DS breakdown voltage of 100V and a maximum operating temperature of 200 °C, this transistor delivers reliability and performance. Its ceramic, metal-sealed cofired package ensures durability, while its flange mount style allows for easy installation. Trust M/a-com's expertise in RF components and unlock the potential of your amplifier designs with the NPT1012B.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material ensures excellent durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower on-resistance and higher current-carrying capacity, making them suitable for high-power amplifier applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and can be easily integrated into different systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying RF signals.

Surface Mount: YES

Surface mount compatibility allows for easy integration onto PCBs, saving space and enabling high-density layouts.

Minimum DS Breakdown Voltage: 100 V

High breakdown voltage ensures reliable operation in high-voltage applications without the risk of damage.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and handling during assembly.

Terminal Form: FLAT

Flat terminal form facilitates secure connections and simplifies soldering processes.

Operating Mode: DEPLETION MODE

Depletion mode operation offers high linearity and superior performance in amplifier circuits.

Highest Frequency Band: S BAND

Ideal for S-band frequency applications, ensuring efficient signal amplification within this frequency range.

No. of Terminals: 2

Simple 2-terminal design for easy connectivity and circuit integration.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables secure mounting and efficient heat dissipation for improved performance.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

High electron mobility technology offers superior speed and efficiency in amplifying RF signals.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this FET can withstand high temperature environments without compromising performance.

Transistor Element Material: GALLIUM NITRIDE

Gallium nitride material provides high power handling capability and low parasitic resistance, making it an excellent choice for RF power applications.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and easy integration into different circuit layouts.

Case Connection: SOURCE

Source connection ensures proper grounding and efficient current flow in the circuit.

Technical Specifications

RF Power Field Effect Transistors (FET) NPT1012B attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from M/a-com Technology Solutions

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

100 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

NPT1012B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

M/a-com Technology Solutions

MACOM designs and manufactures high-performance semiconductor products for the Telecommunications, Industrial and Defense and Datacenter industries. MACOM services over 6,000 customers annually with a broad product portfolio that incorporates RF, Microwave, Analog and Mixed Signal and Optical semiconductor technologies. MACOM has achieved certification to the IATF16949 automotive standard, the ISO9001 international quality standard and the ISO14001 environmental management standard. MACOM has more than 70 years of application expertise with multiple design centers, Si, GaAs and InP fabrication, manufacturing, assembly and test, and operates facilities throughout the United States, Europe, and Asia.

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