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NPT1004DT

M/a-com Technology Solutions

NPT1004DT by M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Terminal Form: GULL WING; No. of Elements: 1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Power Field Effect Transistors (FET) NPT1004DT attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from M/a-com Technology Solutions

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain-Source On Resistance:

.3 ohm

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Minimum Power Gain (Gp):

12.5 dB

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

NPT1004DT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

M/a-com Technology Solutions

MACOM designs and manufactures high-performance semiconductor products for the Telecommunications, Industrial and Defense and Datacenter industries. MACOM services over 6,000 customers annually with a broad product portfolio that incorporates RF, Microwave, Analog and Mixed Signal and Optical semiconductor technologies. MACOM has achieved certification to the IATF16949 automotive standard, the ISO9001 international quality standard and the ISO14001 environmental management standard. MACOM has more than 70 years of application expertise with multiple design centers, Si, GaAs and InP fabrication, manufacturing, assembly and test, and operates facilities throughout the United States, Europe, and Asia.

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