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DE475-501N44A

IXYS Corporation

DE475-501N44A by IXYS Corporation

DE475-501N44A by IXYS is a N-channel RF Power FET with 500V DS breakdown voltage, suitable for switching applications in the VHF band. It features a max drain current of 48A, operates in enhancement mode, and has a package style of small outline.

Median Price

$104.984

Lifecycle Status

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2

In-Stock Inventory

< 1k

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Freelance Electronics

USA . 98 parts In-Stock

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$104.984

100+ parts

$110.233

1k+ parts

$103.934

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98

$104.984

$110.233

$103.934

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Nova Conductors

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Argo Parts USA

USA . 5,405 parts In-Stock

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5,405

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Continental Prestige Electronics

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Aranea Global

USA . 500 parts In-Stock

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Overview

Elevate your RF power applications with the DE475-501N44A by IXYS Corporation. Crafted with precision and expertise, this N-channel field-effect transistor offers unparalleled performance and reliability. Whether you're in need of a switching solution or looking to enhance your circuitry, this transistor delivers exceptional value and benefits. With a robust design and advanced technology, the DE475-501N44A operates at very high frequencies with ease, making it a versatile choice for a wide range of applications. Trust IXYS Corporation to provide you with the quality and innovation you deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material makes the transistor lightweight and cost-effective for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and conductivity compared to P-channel transistors, making them suitable for high power applications.

Configuration: SINGLE

Single configuration transistors are easier to implement and control in circuits compared to dual or multiple configurations.

Transistor Application: SWITCHING

A switching transistor is designed for efficient on/off control, making it ideal for power switching applications.

Surface Mount: YES

Surface mount transistors are easy to install and allow for more compact circuit designs.

Minimum DS Breakdown Voltage: 500 V

The high breakdown voltage ensures the transistor can handle high voltage applications without breakdown.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and efficient use of space on circuit boards.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the switching operation and lower power consumption.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Transistors operating in very high frequency bands are ideal for applications that require high-speed signal processing.

No. of Terminals: 6

The 6 terminals allow for versatile connections in various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and allows for high-density integration.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability in transistor operation.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures the transistor can withstand elevated temperatures without performance degradation.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics and reliability in transistor operation.

Maximum Drain Current (ID): 48 A

The high maximum drain current rating allows the transistor to handle high power applications with ease.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and connection options in circuit designs.

Case Connection: ISOLATED

Isolated case connection helps in preventing interference and ensures the transistor operates reliably in varied circuit conditions.

Technical Specifications

RF Power Field Effect Transistors (FET) DE475-501N44A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

48 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DE475-501N44A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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