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CG2H40035F

Wolfspeed

CG2H40035F by Wolfspeed

CG2H40035F by Wolfspeed is a N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 84V and a min Power Gain (Gp) of 13.5dB. It is commonly used as an amplifier in C Band applications.

Median Price

$279.680

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DigiKey

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Mouser Electronics

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Verical

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$304.400

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Richardson RFPD

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$195.780

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Nova Conductors

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Vyrian

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Aztec Data Supply Inc.

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$0.310

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Advanced Electronics

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AZTECH Wire

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$13.093

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Continental Prestige Electronics

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Semicontronic

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$175.090

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$170.713

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Overview

Experience the power and performance of the CG2H40035F by Wolfspeed. As a leader in RF Power Field Effect Transistors, Wolfspeed sets the standard for quality and reliability. This single-channel N-CHANNEL transistor is perfect for amplifiers, offering a minimum DS breakdown voltage of 84V and impressive power gain of 13.5 dB. With its high electron mobility technology and gallium nitride element material, this transistor delivers exceptional results even in demanding applications. Whether you're working in the C band or need a flange mount package style, the CG2H40035F provides the value, benefits, and advantages that customers like you deserve. Trust Wolfspeed for unparalleled performance and top-notch products.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired package body material ensures durability and reliability in various operating conditions.

Configuration: SINGLE

The single configuration simplifies the setup and operation of the transistor, making it user-friendly.

Minimum Power Gain (Gp): 13.5 dB

With a minimum power gain of 13.5 dB, this transistor provides efficient amplification of signals for enhanced performance.

Highest Frequency Band: C BAND

Operating in the C Band frequency range allows this transistor to be suitable for high-frequency applications.

Maximum Operating Temperature: 85 °C

This transistor can operate effectively at high temperatures up to 85 °C, ensuring reliable performance in challenging environments.

Technical Specifications

RF Power Field Effect Transistors (FET) CG2H40035F attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

84 V

Maximum Drain Current (ID):

4.5 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Maximum Feedback Capacitance (Crss):

.7 pF

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Minimum Power Gain (Gp):

13.5 dB

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

CG2H40035F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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