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CG2H40010P

Wolfspeed

CG2H40010P by Wolfspeed

CG2H40010P by Wolfspeed is an N-CHANNEL RF Power FET with a 84V DS Breakdown Voltage and 15dB Power Gain, ideal for C Band applications. Operating in DEPLETION MODE, it features Gallium Nitride technology, can handle up to 1.5A Drain Current, and operates b/w -40°C to 150°C temperature range.

Median Price

$125.270

Lifecycle Status

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5

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1k+

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Verical

USA . 371 parts In-Stock

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$124.850

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$124.850

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Mouser Electronics

USA . 246 parts In-Stock

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$125.270

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$85.370

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246

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Chip1Stop

Japan . 20 parts In-Stock

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$143.000

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20

$143.000

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Nova Conductors

Japan . 50 parts In-Stock

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$62.603

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Vyrian

USA . 4,381 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 123 parts In-Stock

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$1.060

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123

$1.060

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AZTECH Wire

Italy . 360 parts In-Stock

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$17.447

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$17.447

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Continental Prestige Electronics

USA . 6,518 parts In-Stock

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$62.603

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$61.351

6,518

$62.603

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$61.351

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$62.603

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$59.473

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$58.221

1,000

$62.603

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$59.473

$58.221

Microchip USA

USA . 9,926 parts In-Stock

1+ parts

$143.990

100+ parts

$141.480

1k+ parts

$140.230

10k+ parts

$138.980

9,926

$143.990

$141.480

$140.230

$138.980

Semicontronic

India . 69 parts In-Stock

1+ parts

$171.870

100+ parts

$167.573

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$166.714

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69

$171.870

$167.573

$166.714

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Argo Parts USA

USA . 2,436 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the CG2H40010P by Wolfspeed. As a leading manufacturer in RF Power Field Effect Transistors (FET), Wolfspeed delivers unmatched quality and reliability. Ideal for amplifier applications, this N-CHANNEL transistor offers a minimum DS Breakdown Voltage of 84V and a minimum Power Gain of 15dB. With a package body material of ceramic and metal-sealed cofired, this product ensures top-notch performance even in the most demanding environments. Experience the benefits of high electron mobility technology and gallium nitride element material, providing superior efficiency and durability. Elevate your projects to new heights with Wolfspeed's CG2H40010P.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and efficient heat dissipation, making the product reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs generally have better performance characteristics and lower ON-state resistance compared to P-CHANNEL FETs, enhancing the overall efficiency of the product.

Minimum DS Breakdown Voltage: 84 V

Higher breakdown voltage allows for better performance and reliability in high-voltage applications.

Minimum Power Gain (Gp): 15 dB

With a higher power gain, the product can amplify signals effectively without distortion, ensuring clear and accurate signal transmission.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification scenarios.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving space and making the product suitable for compact designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range ensures the product can operate reliably in various environmental conditions without overheating.

Transistor Element Material: GALLIUM NITRIDE

Gallium Nitride offers high electron mobility, leading to improved performance and efficiency of the transistor.

Technical Specifications

RF Power Field Effect Transistors (FET) CG2H40010P attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

84 V

Maximum Drain Current (ID):

1.5 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Maximum Feedback Capacitance (Crss):

.186 pF

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFP-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Minimum Power Gain (Gp):

15 dB

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

CG2H40010P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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