Loading...

GS66516B-MR

Gan Systems

GS66516B-MR by Gan Systems

GS66516B-MR by Gan Systems is a P-CHANNEL FET for SWITCHING applications. With 650V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at 60A ID. This RF transistor in CHIP CARRIER package offers VERY HIGH FREQUENCY performance.

Median Price

$43.750

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 281 parts In-Stock

1+ parts

$43.750

100+ parts

-

1k+ parts

$34.218

10k+ parts

-

281

$43.750

-

$34.218

-

Chip1Stop

Japan . 165 parts In-Stock

1+ parts

$47.500

100+ parts

$32.900

1k+ parts

$27.500

10k+ parts

-

165

$47.500

$32.900

$27.500

-

Mouser Electronics

USA . 1,030 parts In-Stock

1+ parts

$2,904.680

100+ parts

-

1k+ parts

-

10k+ parts

-

1,030

$2,904.680

-

-

-

Verical

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$32.790

10k+ parts

-

500

-

-

$32.790

-

Arrow

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$32.790

10k+ parts

-

500

-

-

$32.790

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$36.040

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$36.040

-

-

-

Bristol Electronics

USA . 259 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

259

-

-

-

-

Vyrian

USA . 47 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

47

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 312 parts In-Stock

1+ parts

$1.180

100+ parts

-

1k+ parts

-

10k+ parts

-

312

$1.180

-

-

-

Continental Prestige Electronics

USA . 1,844 parts In-Stock

1+ parts

$36.040

100+ parts

-

1k+ parts

-

10k+ parts

$35.319

1,844

$36.040

-

-

$35.319

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$36.761

100+ parts

$36.761

1k+ parts

$36.761

10k+ parts

-

2,000

$36.761

$36.761

$36.761

-

Argo Parts USA

USA . 2,386 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,386

-

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$35.319

1k+ parts

$34.238

10k+ parts

$33.517

2,000

-

$35.319

$34.238

$33.517

Overview

Infineon Technologies GS665xx Enhancement-Mode High Electron Mobility Transistors (E-HEMT) feature high current, high voltage breakdown, and high switching frequency. These power transistors include Island Technology cell layout with high-current die and high yield, and GaNPX®  small packaging enables low inductance and low thermal resistance. These power transistors offer very low junction-to-case thermal resistance for high-power applications. The GS665xx enhancement-mode silicon power transistors are available as bottom-sided or top-sided cooled transistors. These power transistors provide ultra-low FOM die, reverse current capability, and zero reverse recovery loss.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their high efficiency and low power consumption, which makes them a good choice for energy-conscious applications.

Configuration: SINGLE

Single configuration transistors are easier to control and integrate into circuit designs, making them a reliable choice for various applications.

Transistor Application: SWITCHING

Switching transistors are designed for fast switching speeds, making them ideal for applications where quick response times are required.

Surface Mount: YES

Surface mount transistors are easy to solder onto circuit boards, allowing for compact and space-saving designs.

Minimum DS Breakdown Voltage: 650 V

A high breakdown voltage allows this transistor to handle high voltages, making it suitable for applications that require robust performance.

Package Shape: RECTANGULAR

The rectangular package shape is convenient for mounting and integrating into various circuit layouts.

Terminal Form: NO LEAD

No lead terminals simplify the mounting process and reduce the risk of mechanical failure.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are known for their high input impedance and ease of control.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Transistors designed for very high frequency bands are suitable for applications that require fast signal processing and high data rates.

No. of Terminals: 6

The 6-terminal design provides flexibility in circuit connections and configurations.

Package Style (Meter): CHIP CARRIER

Chip carrier packages offer high thermal performance and durability, ensuring reliable operation in various environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides good power efficiency and signal amplification capabilities.

Transistor Element Material: SILICON

Silicon transistors are known for their high thermal conductivity and reliable performance in a wide range of operating conditions.

Terminal Finish: GOLD OVER NICKEL

Gold-over-nickel terminal finish ensures good conductivity and corrosion resistance, prolonging the lifespan of the transistor.

Maximum Drain Current (ID): 60 A

The high maximum drain current rating allows this transistor to handle large power loads, suitable for high-power applications.

Terminal Position: BOTTOM

Bottom terminal position simplifies the PCB layout and enables easier heat dissipation.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates that this transistor has moderate sensitivity to moisture, making it suitable for a wide range of operating environments.

Case Connection: SOURCE

Source connection allows for easy integration into circuit layouts and consistent signal flow.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can be reliably soldered onto PCBs without risking thermal damage.

Technical Specifications

RF Power Field Effect Transistors (FET) GS66516B-MR attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Gan Systems

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

60 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-XBCC-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

GOLD OVER NICKEL

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

GS66516B-MR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Gan Systems

We live in a data and energy driven world increasingly defined by power-reliant industries including data centers, electric vehicles, renewable energy systems, industrial motors, and consumer electronics. These businesses have long faced formidable and universal challenges around energy wasted in power conversion, as well as the size limitations placed on overall product design by the old generation ecosystem of power system components. Yesterday’s silicon has reached its limits. GaN technology is the clear and undisputed solution for today and tomorrow. GaN Systems’ approach to a new generation of GaN power transistors is leading an industry-changing shift in both the short-term and ‘near future’ relationship between technology’s power systems and energy–creating significant product and system-wide changes. Design engineers are building power systems that are: · one-quarter the power loss · one-quarter the size · one-quarter the weight · and less expensive than silicon-based solutions For corporate leaders, GaN not only changes their company’s immediate relationship with power; it can alter the competitive trajectory of the entire business through the creation of whole new classes of products, systems, and sustainability initiatives.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3