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GS66508T-MR

Gan Systems

GS66508T-MR by Gan Systems

GS66508T-MR by Gan Systems is a N-CHANNEL FET for SWITCHING applications. It operates at 650V with 30A ID, suitable for VERY HIGH FREQUENCY BAND. This ENHANCEMENT MODE transistor in CHIP CARRIER package uses GALLIUM NITRIDE tech and can withstand -55 to 150 °C temperatures.

Median Price

$24.230

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Mouser Electronics

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$15.910

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$14.840

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$20.460

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Verical

USA . 195 parts In-Stock

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$18.870

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$16.190

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195

$24.230

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Arrow

USA . 195 parts In-Stock

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$24.230

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$18.870

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$16.190

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195

$24.230

$18.870

$16.190

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Chip1Stop

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$25.600

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$16.000

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$13.700

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586

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Nova Conductors

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Vyrian

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Aztec Data Supply Inc.

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Continental Prestige Electronics

USA . 1,243 parts In-Stock

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$13.215

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$13.215

Overview

Infineon Technologies GS665xx Enhancement-Mode High Electron Mobility Transistors (E-HEMT) feature high current, high voltage breakdown, and high switching frequency. These power transistors include Island Technology cell layout with high-current die and high yield, and GaNPX®  small packaging enables low inductance and low thermal resistance. These power transistors offer very low junction-to-case thermal resistance for high-power applications. The GS665xx enhancement-mode silicon power transistors are available as bottom-sided or top-sided cooled transistors. These power transistors provide ultra-low FOM die, reverse current capability, and zero reverse recovery loss.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their high efficiency and fast switching speeds, making them ideal for applications where speed and power are crucial.

Minimum DS Breakdown Voltage: 650 V

With a high breakdown voltage, this FET can handle high voltage applications with ease, ensuring reliable performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can quickly turn on and off, making it suitable for high-speed switching circuits.

Maximum Drain Current (ID): 30 A

With a high drain current rating, this FET can handle large currents, making it suitable for high-power applications.

Transistor Element Material: GALLIUM NITRIDE

Gallium nitride is known for its high electron mobility and thermal conductivity, making it an excellent choice for high-frequency and high-power applications.

Technical Specifications

RF Power Field Effect Transistors (FET) GS66508T-MR attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Gan Systems

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

30 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-XBCC-N4

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

Gold (Au) - with Nickel (Ni) barrier

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

GS66508T-MR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Gan Systems

We live in a data and energy driven world increasingly defined by power-reliant industries including data centers, electric vehicles, renewable energy systems, industrial motors, and consumer electronics. These businesses have long faced formidable and universal challenges around energy wasted in power conversion, as well as the size limitations placed on overall product design by the old generation ecosystem of power system components. Yesterday’s silicon has reached its limits. GaN technology is the clear and undisputed solution for today and tomorrow. GaN Systems’ approach to a new generation of GaN power transistors is leading an industry-changing shift in both the short-term and ‘near future’ relationship between technology’s power systems and energy–creating significant product and system-wide changes. Design engineers are building power systems that are: · one-quarter the power loss · one-quarter the size · one-quarter the weight · and less expensive than silicon-based solutions For corporate leaders, GaN not only changes their company’s immediate relationship with power; it can alter the competitive trajectory of the entire business through the creation of whole new classes of products, systems, and sustainability initiatives.

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