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PD84002

STMicroelectronics

PD84002 by STMicroelectronics

STMicroelectronics PD84002 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it operates in ENHANCEMENT MODE with a max power dissipation of 6W.

Median Price

$3.029

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 53 parts In-Stock

1+ parts

$3.029

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53

$3.029

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Digiode

USA . 4,983 parts In-Stock

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4,983

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Vyrian

USA . 4,937 parts In-Stock

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4,937

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Chip Stock

USA . 4,133 parts In-Stock

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4,133

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Anansix

USA . 406 parts In-Stock

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406

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,075 parts In-Stock

1+ parts

$0.586

100+ parts

-

1k+ parts

$0.527

10k+ parts

-

1,075

$0.586

-

$0.527

-

MKK Technologies

India . 2,267 parts In-Stock

1+ parts

$1.102

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-

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2,267

$1.102

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DigiPath Technology Company

USA . 2,267 parts In-Stock

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$1.102

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2,267

$1.102

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$2.968

100+ parts

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$2.849

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1,000

$2.968

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$2.849

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Continental Prestige Electronics

USA . 1,681 parts In-Stock

1+ parts

$3.029

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$2.968

1,681

$3.029

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$2.968

Argo Parts USA

USA . 1,155 parts In-Stock

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$3.029

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$3.029

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Ampacity Inc.

Singapore . 1,149 parts In-Stock

1+ parts

$12.050

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1,149

$12.050

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AZTECH Wire

Italy . 895 parts In-Stock

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$19.541

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895

$19.541

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Kepictronics

USA . 14,000 parts In-Stock

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Perfect Parts

USA . 13,337 parts In-Stock

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Lixinc

USA . 7,499 parts In-Stock

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Corphita

USA . 4,468 parts In-Stock

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Futuretech Components

Singapore . 2,288 parts In-Stock

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2,288

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Parana Technologies

USA . 2,243 parts In-Stock

1+ parts

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$0.701

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2,243

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$0.701

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Overview

Unleash the power of innovation with the PD84002 by STMicroelectronics, a top-tier RF Power Field Effect Transistor that sets new standards in performance and reliability. Designed for amplifiers in the ultra-high frequency band, this N-channel transistor boasts a maximum drain current of 2A and a maximum power dissipation of 6W. With its cutting-edge metal-oxide semiconductor technology and single configuration, the PD84002 delivers unmatched efficiency and precision. Elevate your projects to new heights with this state-of-the-art component that guarantees exceptional quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable package for the FET, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and conductivity compared to P-channel FETs, offering better performance.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in different amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, saving time and effort in assembly.

Minimum DS Breakdown Voltage: 25 V

With a high breakdown voltage, the FET can handle higher voltage levels without damage, increasing its reliability.

Package Shape: RECTANGULAR

The rectangular shape provides a standard form factor for easy integration into different systems and circuits.

Terminal Form: FLAT

Flat terminals ensure secure connections and efficient heat dissipation, contributing to better overall performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the FET, enabling precise amplification of signals.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high frequency band, making it suitable for high-speed and high-frequency applications.

Maximum Drain Current (Abs) (ID): 2 A

With a high maximum drain current rating, the FET can handle higher current levels, ensuring stable operation.

No. of Terminals: 3

Three terminals provide the necessary connections for controlling and amplifying signals, offering versatility in circuit design.

Maximum Power Dissipation (Abs): 6 W

With a high power dissipation rating, the FET can handle higher power levels without overheating, enhancing its reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, enabling compact and efficient designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers reliable and stable performance, ideal for amplifier applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the FET can withstand high-temperature environments, ensuring reliable operation.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, contributing to the FET's high performance and reliability.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals ensures good solderability and corrosion resistance, extending the FET's lifespan.

Terminal Position: SINGLE

Single terminal position simplifies the connection process, reducing the risk of errors during installation.

Case Connection: SOURCE

Source connection simplifies the circuit design and layout, making it easier to integrate into amplifier circuits.

Technical Specifications

RF Power Field Effect Transistors (FET) PD84002 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

6 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD84002 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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