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MHT1008NT1

NXP Semiconductors

MHT1008NT1 by NXP Semiconductors

NXP Semiconductors' MHT1008NT1 is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE with a 65V DS Breakdown Voltage and supports S BAND frequencies. The transistor has a max operating temperature of 150°C and comes in a SMALL OUTLINE package style.

Median Price

$12.980

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 2,943 parts In-Stock

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$11.210

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$10.030

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$9.440

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$9.440

DigiKey

USA . 389 parts In-Stock

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$14.750

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Digiode

USA . 514 parts In-Stock

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$11.856

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Vyrian

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Anansix

USA . 1,034 parts In-Stock

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Nova Conductors

Japan . 800 parts In-Stock

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DigiKey Marketplace

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Modulus Dynamics

Lithuania . 17,786 parts In-Stock

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$0.496

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$0.496

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$0.496

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Corohmni

South Africa . 832 parts In-Stock

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$1.991

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Corphita

USA . 163 parts In-Stock

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$11.232

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Microchip USA

USA . 7,758 parts In-Stock

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$50.680

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Robosynatics

Brazil . 19,594 parts In-Stock

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Lucentia Tech

USA . 19,594 parts In-Stock

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$1.929

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$1.889

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$1.889

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$1.889

UNI Independent Distributors

Spain . 4,712 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Experience unparalleled performance and reliability with the MHT1008NT1 RF Power FET by NXP Semiconductors. As a leader in semiconductor technology, NXP ensures top-notch quality and innovation in every product. This amplifier transistor is perfect for S Band applications, offering enhanced efficiency and power capabilities. Don't settle for less when you can have the best - choose the MHT1008NT1 for superior performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body makes the product lightweight and durable, making it suitable for portable applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have better performance characteristics than P-channel FETs, making this product a good choice for high-performance applications.

Minimum DS Breakdown Voltage: 65 V

With a minimum breakdown voltage of 65 V, this FET can handle higher voltages, making it suitable for applications requiring higher power levels.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability, making this FET a good choice for demanding applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this FET to operate reliably in high-temperature environments.

Technical Specifications

RF Power Field Effect Transistors (FET) MHT1008NT1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MHT1008NT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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