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IXZR08N120A

IXYS Corporation

IXZR08N120A by IXYS Corporation

IXZR08N120A by IXYS Corp is an N-CHANNEL FET with 1200V DS breakdown voltage, 8A max drain current, and 250W power dissipation. Ideal for switching applications in RF power systems due to its single configuration with built-in diode and enhancement mode operation. Package: PLASTIC/EPOXY, Shape: RECTANGULAR, Terminals: THROUGH-HOLE.

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Semicontronic

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Overview

Unlock the power of cutting-edge technology with the IXZR08N120A by IXYS Corporation. As a leading manufacturer in the industry, IXYS delivers top-quality RF Power Field Effect Transistors that are versatile and reliable. Designed for switching applications, this N-CHANNEL transistor offers a breakthrough in performance and efficiency. Say goodbye to limitations with its 1200V minimum DS breakdown voltage and 8A maximum drain current. Experience the difference with the IXZR08N120A - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the transistor, extending its durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have better performance and efficiency compared to P-channel FETs, making this product a good choice for applications where high performance is required.

Minimum DS Breakdown Voltage: 1200 V

The high breakdown voltage allows this transistor to withstand high voltage applications without damage, making it suitable for various high-power switching applications.

Maximum Power Dissipation (Abs): 250 W

With a high power dissipation capability, this transistor can handle large amounts of power without overheating, making it reliable for high-power applications.

Transistor Element Material: SILICON

Silicon is a widely used material for transistors due to its excellent electrical properties, ensuring high performance and reliability for this product.

Technical Specifications

RF Power Field Effect Transistors (FET) IXZR08N120A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXZR08N120A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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