Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NXP Semiconductors' MHT1006NT1 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 20dB Power Gain. Ideal for AMPLIFIER applications in S BAND, it operates in ENHANCEMENT MODE at -40 to 150 °C, featuring a PLASTIC/EPOXY package and METAL-OXIDE SEMICONDUCTOR technology.
Median Price
$12.880
Lifecycle Status
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5
In-Stock Inventory
1k+
DigiKey
1+ parts
$15.180
100+ parts
$11.781
1k+ parts
$10.480
10k+ parts
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Rochester
$10.580
$9.470
$8.910
Digiode
$11.200
Vyrian
$11.790
Anansix
Ampacity Inc.
$10.020
One Stop Electronics
Corphita
$10.611
Component Stockers USA
$14.160
$13.320
$12.050
Continental Prestige Electronics
Authorized Procurement Solutions
UNI Independent Distributors
This material provides durability and protection for the transistor, making it suitable for various environments and handling conditions.
N-channel transistors typically have better conductivity and efficiency compared to P-channel transistors, making this product a good choice for applications requiring high performance.
A single configuration simplifies circuit design and integration, making it easier to use in amplifier applications.
Designed specifically for amplification purposes, ensuring optimal performance in amplification circuits.
Surface mountable design allows for easy and efficient installation on circuit boards, saving space and simplifying manufacturing processes.
With a high breakdown voltage, this transistor can handle higher voltages without damage, ensuring reliability in various operating conditions.
High power gain indicates strong amplification capabilities, making this transistor suitable for applications requiring signal boost.
Rectangular shape facilitates easy integration into circuit layouts and board designs, enhancing overall system efficiency.
MOSFET technology offers high switching speeds and low power consumption, making this transistor energy-efficient and suitable for high-frequency applications.
With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation, ensuring reliability in demanding conditions.
A wide operating temperature range allows this transistor to function effectively in both hot and cold environments, providing versatility in application use.
Tin finish on terminals enhances solderability and conductivity, ensuring reliable electrical connections for optimal performance.
RF Power Field Effect Transistors (FET) MHT1006NT1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors
Case Connection:
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JESD-609 Code:
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Minimum Power Gain (Gp):
Surface Mount:
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Transistor Application:
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MHT1006NT1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
RN41N-I/RM
Microchip Technology
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
LL4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
LM317TG
Texas Instruments
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
SMBJ18CA
Onsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Hy Electronic
NE555D
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
DRV5053VAQLPG
Texas Instruments DRV5053VAQLPG is a magnetic field sensor with 2.5-38V supply voltage range, -40 to 125°C operating temperature, and 0-2V output. Ideal for applications requiring Hall effect sensors like automotive, industrial automation, and robotics due to its compact size (1.52" x 4mm) and high output current capability of 2.3A.
1N4148W-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Good-ark Electronics
BSS138
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
Uniohm
OPA2227UA
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
BSS138-7-F
Diodes Incorporated
Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.
LM317T
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR; Minimum Input-Output Voltage Differential: 3 V;
BAV99
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Positronic Industries
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Body or Shell Style: RECEPTACLE;
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
RF5L05750CF2
STMicroelectronics
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
MRF284S
Freescale Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-CDFP-F2; Terminal Form: FLAT;
MRF6VP11KHR5
N-CHANNEL; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
D2002UK
Tt Electronics Plc
D2002UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR FET has a max ID of 2A and can withstand temperatures up to 200°C.
PD57070S-E
PD57070S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 95 W.
934061039112
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
A3G26D055NT4
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
LET9085
LET9085 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This versatile component supports high power dissipation up to 186 W.
934061749112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 2; Package Shape: RECTANGULAR;
MRF9030LR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;
MRF8P29300HR6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
ST24180
RF Power Field-Effect Transistors;
MW6S010GNR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G2;
PTFA080551EV4R250XTMA1
Infineon Technologies
PTFA080551EV4R250XTMA1 by Infineon is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18dB Power Gain. It operates in the Ultra High Frequency Band, ideal for amplifier applications. The transistor features a ceramic-metal package, flat terminals, and can withstand temperatures up to 200°C.
LET9060S
LET9060S by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY, it offers 7A Drain Current and 170W Power Dissipation. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can handle up to 165°C operating temperature.
ART700FHU
Ampleon Netherlands B V
ART700FHU by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with 177V DS Breakdown Voltage, 26.8 dB Power Gain, and operates in the Ultra High Frequency Band. It is a COMMON SOURCE amplifier transistor with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-performance applications requiring a FLANGE MOUNT package style.
PD60015
PD60015 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min breakdown voltage, operates in enhancement mode, and supports L-band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
TGF2023-2-05
Qorvo
Qorvo's TGF2023-2-05 is a N-CHANNEL RF Power FET with 17.6 dB Gp for KU BAND applications. Operating in DEPLETION MODE, it has 5A ID and uses GALLIUM NITRIDE technology. This SINGLE configuration transistor is surface mountable and has a RECTANGULAR package shape.
BLF178XRS,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;
MRF8S21200HSR6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MHT1008NT1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; Maximum Operating Temperature: 150 Cel;
MHT1000HR5
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MHT1001HR5
MHT1002GNR3
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MHT1002NR3
RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;
MHT1003NR3
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
MHT1004GNR3
RF Power Field-Effect Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MHT1004NR3
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN;
MHT1108NT1
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
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