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TIM0910-8

Toshiba

TIM0910-8 by Toshiba

Toshiba's TIM0910-8 is an N-channel RF Power FET with 15V DS breakdown voltage, suitable for X-band applications. Featuring a single configuration, it has a max drain current of 10.4A and can handle up to 60W power dissipation at 175°C operating temperature. Ideal for high-frequency amplification in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 571 parts In-Stock

1+ parts

$44.050

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571

$44.050

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Continental Prestige Electronics

USA . 4,248 parts In-Stock

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4,248

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Argo Parts USA

USA . 3,423 parts In-Stock

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3,423

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Discover the power of Toshiba's TIM0910-8 RF Power Field Effect Transistor. With its high-quality design and reliable performance, this N-CHANNEL FET is perfect for X BAND applications. Offering a maximum drain current of 10.4 A and a maximum power dissipation of 60 W, this transistor provides exceptional value and benefits to customers looking for superior performance in their electronic devices. Upgrade your products with Toshiba's TIM0910-8 and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures excellent durability and heat dissipation, making this product suitable for high-power applications.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically offer better performance and efficiency compared to P-Channel FETs, making this product a good choice for RF power applications.

Configuration: SINGLE

The single configuration simplifies the design and integration process, making it easier to use in various RF power systems.

Minimum DS Breakdown Voltage: 15 V

The minimum breakdown voltage of 15 V ensures reliable operation and protection against voltage spikes, enhancing the overall robustness of the product.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The use of metal-oxide semiconductor technology offers high performance and reliability, making this product suitable for demanding RF power applications.

Maximum Power Dissipation Ambient: 60 W

With a high maximum power dissipation of 60 W, this FET can handle high power levels, making it ideal for applications requiring high performance.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175°C ensures that this FET can operate in harsh environmental conditions without any issues.

Technical Specifications

RF Power Field Effect Transistors (FET) TIM0910-8 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Toshiba

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (Abs) (ID):

10.4 A

Maximum Drain Current (ID):

10.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

X BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

60 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

TIM0910-8 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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