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TIM0910-15L

Toshiba

TIM0910-15L by Toshiba

The Toshiba TIM0910-15L is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in X band. Featuring a ceramic-metal sealed co-fired package, it operates in depletion mode with 11.5A max drain current and 60W power dissipation at 175°C ambient temperature.

Median Price

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Lifecycle Status

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1

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< 1k

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Ampacity Inc.

Singapore . 1,526 parts In-Stock

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$6.050

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1,526

$6.050

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Argo Parts USA

USA . 2,945 parts In-Stock

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Continental Prestige Electronics

USA . 2,035 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Experience the power and reliability of Toshiba with the TIM0910-15L RF Power Field Effect Transistor. Designed for amplifier applications in the X band, this N-channel transistor offers exceptional performance with a minimum DS breakdown voltage of 15V and a maximum power dissipation of 60W. With a ceramic, metal-sealed co-fired package body and junction field effect transistor technology, this single configuration transistor provides customers with high-quality components that deliver superior results. Trust Toshiba for the best in RF power transistors.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed cofired package body material provides durability and high thermal conductivity, ensuring reliable performance even in harsh operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel configuration allows for efficient current flow and improved overall performance in amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use this RF power FET in various applications.

Maximum Power Dissipation Ambient: 60 W

High maximum power dissipation ambient rating of 60 W allows for handling of high power levels, making this RF power FET suitable for demanding amplifier applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this RF power FET can withstand high temperatures without compromising performance, making it suitable for use in a wide range of environments.

Transistor Element Material: GALLIUM ARSENIDE

The gallium arsenide transistor element material offers high electron mobility, high saturation velocity, and low noise characteristics, making this RF power FET suitable for high-frequency and high-power applications.

Technical Specifications

RF Power Field Effect Transistors (FET) TIM0910-15L attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Toshiba

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (ID):

11.5 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

X BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

60 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

TIM0910-15L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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