Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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RD15HVF1 by Mitsubishi Electric is an N-CHANNEL RF Power FET with a 30V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 4A, power dissipation of 48W, and operates in ENHANCEMENT MODE at up to 150°C temperature.
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This material provides good thermal properties and durability, making the transistor suitable for various applications.
N-channel FETs typically have higher mobility and conductivity, providing better performance in amplification applications.
With a high breakdown voltage, this transistor can handle higher voltages without damage, increasing reliability.
The high power dissipation capability allows the transistor to handle more power without overheating, making it suitable for high-power applications.
This technology offers high input impedance and low output impedance, making the transistor efficient for amplification tasks.
The high operating temperature range ensures the transistor can function reliably even in demanding conditions.
RF Power Field Effect Transistors (FET) RD15HVF1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Mitsubishi Electric
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RD15HVF1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.
LM107H
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
2N7002
Dc Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
MMBT3904LT1G
Onsemi
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
1N4148WS
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ATMEGA328P-AU
Microchip Technology
ATMEGA328P-AU by Microchip: 8-bit RISC CPU, 20 MHz clock, 23 I/O lines. Ideal for industrial applications with SPI, TWI, USART connectivity and low power mode. Features include 2048 RAM bytes, 1024 EEPROM size, and 16384 ROM words.
LM7805CT
Texas Instruments
LM7805CT by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a dropout voltage of 2V, and offers excellent line/load regulation for various electronic applications.
BAV99WT1G
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDC5614P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
CDSOT23-SM712
Bourns
Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.
FDV304P
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
1N4148
Invensys Sensor Systems
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 100 V;
Good-ark Electronics
2N2222A
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
Yangzhou Yangjie Electronics
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;
LET9060STR
STMicroelectronics
LET9060STR by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Ideal for compact, high-performance circuits with a small outline package.
FLU35XM
Eudyna Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Operating Mode: DEPLETION MODE; No. of Terminals: 4;
LET9060
LET9060 by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring a 12A ID and GULL WING terminals, it's a SINGLE configuration transistor in PLASTIC/EPOXY package.
934064628112
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
PD57060TR-E
PD57060TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance in demanding environments.
GS66508T-TR
Gan Systems
GS66508T-TR by Gan Systems is a N-CHANNEL FET for SWITCHING applications. With 650V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at -55 to 150°C. Utilizing GALLIUM NITRIDE technology, it handles up to 30A ID in VERY HIGH FREQUENCY BAND operations.
ST36015
RF Power Field-Effect Transistors;
BLF571,112
Ampleon Netherlands B V
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): 245; Moisture Sensitivity Level (MSL): 1;
SD2931
SD2931 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 125 V, and can dissipate up to 292 W. Ideal for high-performance amplification in communication systems.
MRF1511NT1
Freescale Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Case Connection: SOURCE; Transistor Element Material: SILICON;
A2T21S260W12NR3
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;
LET9060F
LET9060F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 130 W.
MRF151G
Asi Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 40 A;
MRF6S20010NR1
NXP Semiconductors' MRF6S20010NR1 is a RF Power FET with 68V DS breakdown voltage, operating in S Band. It's an N-CHANNEL transistor for amplification, featuring METAL-OXIDE SEMICONDUCTOR tech. Suitable for surface mount applications with max temp of 225°C, ideal for high-frequency amplification needs.
RF3L05250CB4
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
A2T18H160-24SR3
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A2T26H300-24SR6
MRF374
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;
934064686112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: S-CQFM-F6; Minimum DS Breakdown Voltage: 65 V;
A5G38H055NT4
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RD15HVF1-101
Mitsubishi Electric
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY;
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