Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 16 A; Maximum Drain Current (Abs) (ID): 16 A;
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Assy Fe
RF Power Field Effect Transistors (FET) BLF177 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Asi Semiconductor
Configuration:
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Maximum Drain Current (ID):
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BLF177 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.
BAV99
Nexperia
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555/D
General Electric Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;
2N2222A
Tt Electronics Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
1N4148
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
SMBJ18CA
Vishay Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0402FR-071KL
Yageo
The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1554216004
Molex
WIRE AND CABLE;
STM32H743IIT6
STMicroelectronics
STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).
2N7002
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
LL4148
Onsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
CC0603KRX7R9BB103
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
FDN306P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
2N7002DWH6327XTSA1
Infineon Technologies
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
NE555D
NXP Semiconductors
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LM317TG
Texas Instruments
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
AT90CAN128-16AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;
Frontier Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Siemens
FLL120MK
Fujitsu Semiconductor America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 15 V;
MRF1513T1
Tyco Electronics M/a-com
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PQCC-N4; Transistor Element Material: SILICON; Package Style (Meter): CHIP CARRIER;
A3G35H100-04SR3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL; Maximum Operating Temperature: 225 Cel;
934065695118
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;
BLF246,112
BLF246,112 by NXP Semiconductors is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the VERY HIGH FREQUENCY BAND and has a max ID of 13A. Ideal for AMPLIFIER applications, this METAL-OXIDE SEMICONDUCTOR FET is designed for ENHANCEMENT MODE operation in a FLANGE MOUNT package.
A2T21S260W12NR3
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;
AFT26H250-24SR6
NXP Semiconductors' AFT26H250-24SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-power RF applications in various industries.
A5G23H110NT4
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
934061525112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 33 A; Package Shape: RECTANGULAR; Terminal Position: DUAL;
A2T18S162W31SR3
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
PD54008-E
STMicroelectronics PD54008-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. With 5A Drain Current and 73W Power Dissipation, it's ideal for high-power amplification needs.
MRF137
Asi Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (Abs) (ID): 5 A; Terminal Form: FLAT;
BLF246
New Jersey Semiconductor Products
N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 65 V; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
RF5L051K0CB4
RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;
LET21030C
LET21030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the S band. This surface-mount transistor ensures efficient performance up to 200 °C.
LET19060C
LET19060C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power scenarios with a dissipation of up to 130 W.
LET9060F
LET9060F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 130 W.
PD54008L
PD54008L by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount device excels in high-power scenarios with a dissipation of up to 44 W.
A2V09H300-04NR3
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Terminal Finish: TIN;
PD57045S
STMicroelectronics PD57045S is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 5A, operates in ENHANCEMENT MODE, and can withstand temperatures up to 165 °C.
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BLF177
Ampleon Netherlands B V
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Reference Standard: IEC-60134; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .3 ohm;
N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;
BLF177 by NXP Semiconductors is a single N-channel RF Power FET with 125V DS breakdown voltage, suitable for amplifier applications in the VHF band. It features a max drain current of 16A, power dissipation of 220W, and operates in enhancement mode. The package is ceramic-metal sealed co-fired with flange mount style and radial terminal position.
BLF175
N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 125 V; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Drain Current (ID): 4 A;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Power Dissipation Ambient: 68 W; Minimum DS Breakdown Voltage: 125 V;
BLF177,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 14 pF; No. of Terminals: 4; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;
BLF175,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Additional Features: HIGH RELIABILITY; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
BLF178XR,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Minimum DS Breakdown Voltage: 110 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
BLF178XRS,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;
BLF147
N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Terminal Form: FLAT;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Case Connection: ISOLATED; No. of Terminals: 4;
P1db
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; JESD-30 Code: O-CRFM-F4; Operating Mode: ENHANCEMENT MODE;
BLF10H6600P
RF Power Field-Effect Transistors;
BLF10M6LS200
BLF1046,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): 4.5 A; Maximum Operating Temperature: 200 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLF10H6600PS
BLF145
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Supply Digital Components
$106.00
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12,000 In-Stock
Total price ≈ $80,197.29
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