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RD15HVF1-101

Mitsubishi Electric

RD15HVF1-101 by Mitsubishi Electric

RD15HVF1-101 by Mitsubishi Electric is an N-CHANNEL RF Power FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers 4A Drain Current and 48W Power Dissipation. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, this transistor has a max temperature of 150°C.

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Overview

Unlock the full potential of your RF power applications with the RD15HVF1-101 by Mitsubishi Electric. As a leading manufacturer in the industry, Mitsubishi Electric guarantees top-quality products that deliver superior performance and reliability. This N-channel field-effect transistor is perfect for amplifier use in the ultra-high frequency band, offering a maximum power dissipation of 48W and a minimum DS breakdown voltage of 30V. Trust Mitsubishi Electric to provide you with cutting-edge technology that elevates your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the RF Power FET, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL type allows for efficient conduction of current and low ON-resistance, resulting in better performance of the amplifier.

Configuration: SINGLE

Single configuration simplifies the circuit design and reduces complexity, making it easier to integrate into systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring high gain and low noise operation for signal processing.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this RF Power FET can handle high voltages effectively, making it reliable for voltage amplification.

Package Shape: RECTANGULAR

Rectangular shape allows for space-efficient mounting and easy integration into various systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly, ensuring reliable electrical connections.

Operating Mode: DEPLETION MODE

Depletion mode operation offers high isolation and low noise performance, ideal for signal processing in RF applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operates in the ultra-high frequency band, enabling efficient amplification and transmission of high-frequency signals.

Maximum Drain Current (Abs) (ID): 4 A

With a maximum drain current of 4A, this RF Power FET can handle high power levels, making it suitable for high-power amplification applications.

No. of Terminals: 3

Three terminals provide the necessary connections for proper operation and integration within a circuit.

Maximum Power Dissipation (Abs): 48 W

Capable of dissipating up to 48W of power, ensuring efficient heat management and reliability during high-power operation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy mounting and secure installation in systems requiring RF power amplification.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for efficient power handling, high frequency operation, and low noise performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Can operate effectively at temperatures up to 150°C, ensuring stable performance in high-temperature environments.

Transistor Element Material: SILICON

Silicon material offers high reliability, low cost, and excellent electrical properties, making it a common choice for RF power transistors.

Terminal Position: SINGLE

Single terminal position simplifies connection and installation, reducing complexity in circuit design.

Case Connection: SOURCE

Source connection provides the necessary grounding for efficient signal amplification and transmission in RF applications.

Technical Specifications

RF Power Field Effect Transistors (FET) RD15HVF1-101 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Mitsubishi Electric

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

RD15HVF1-101 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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