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STAC2933

STMicroelectronics

STAC2933 by STMicroelectronics

STAC2933 by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR technology transistor offers reliable performance in demanding environments.

Median Price

$98.560

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 39 parts In-Stock

1+ parts

$98.560

100+ parts

$81.250

1k+ parts

-

10k+ parts

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39

$98.560

$81.250

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,669 parts In-Stock

1+ parts

$93.632

100+ parts

-

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3,669

$93.632

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Vyrian

USA . 6,332 parts In-Stock

1+ parts

-

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6,332

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Anansix

USA . 184 parts In-Stock

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184

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,942 parts In-Stock

1+ parts

$1.138

100+ parts

-

1k+ parts

$1.024

10k+ parts

-

1,942

$1.138

-

$1.024

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MKK Technologies

India . 860 parts In-Stock

1+ parts

$2.140

100+ parts

-

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860

$2.140

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DigiPath Technology Company

USA . 860 parts In-Stock

1+ parts

$2.140

100+ parts

-

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860

$2.140

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Corphita

USA . 1,805 parts In-Stock

1+ parts

$88.704

100+ parts

-

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1,805

$88.704

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Microchip USA

USA . 9,532 parts In-Stock

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9,532

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Parana Technologies

USA . 1,243 parts In-Stock

1+ parts

-

100+ parts

$1.361

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1,243

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$1.361

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Perfect Parts

USA . 53 parts In-Stock

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53

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Overview

Elevate your RF power applications with the STAC2933 from STMicroelectronics. As a leader in semiconductor technology, STMicroelectronics delivers top-notch quality and reliability in their N-CHANNEL RF Power Field Effect Transistors (FET). With a single configuration and surface mount capability, this transistor offers a maximum drain current of 40A and a power dissipation of 795W, making it ideal for high-performance systems. Trust STMicroelectronics to provide unmatched value and performance in every application.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs generally have lower on-state resistance and higher current carrying capacity, making them suitable for high power applications.

Configuration: SINGLE

Single configuration FETs are simpler to design and use, making them ideal for straightforward applications.

Surface Mount: YES

Surface mount FETs are easier to integrate onto PCBs, saving space and simplifying the overall design.

Maximum Drain Current (Abs) (ID): 40 A

With a high maximum drain current, this FET can handle heavy loads and high power requirements efficiently.

Maximum Power Dissipation (Abs): 795 W

The high maximum power dissipation allows the FET to handle high power levels without overheating, ensuring reliable performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and fast switching speeds, making this FET suitable for demanding applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures and harsh environments, ensuring long-term reliability.

Technical Specifications

RF Power Field Effect Transistors (FET) STAC2933 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

40 A

Maximum Drain Current (ID):

40 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STAC2933 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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