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STAC3933

STMicroelectronics

STAC3933 by STMicroelectronics

STAC3933 by STMicroelectronics is a N-CHANNEL RF Power FET with 20A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C. This SINGLE configuration FET uses METAL-OXIDE SEMICONDUCTOR technology and is surface mountable.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,513 parts In-Stock

1+ parts

-

100+ parts

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4,513

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Vyrian

USA . 3,177 parts In-Stock

1+ parts

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-

1k+ parts

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3,177

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Anansix

USA . 880 parts In-Stock

1+ parts

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880

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 135 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

$0.441

10k+ parts

-

135

$0.490

-

$0.441

-

MKK Technologies

India . 2,056 parts In-Stock

1+ parts

$0.922

100+ parts

-

1k+ parts

-

10k+ parts

-

2,056

$0.922

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DigiPath Technology Company

USA . 2,056 parts In-Stock

1+ parts

$0.922

100+ parts

-

1k+ parts

-

10k+ parts

-

2,056

$0.922

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-

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AZTECH Wire

Italy . 913 parts In-Stock

1+ parts

$19.900

100+ parts

-

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10k+ parts

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913

$19.900

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Microchip USA

USA . 287 parts In-Stock

1+ parts

$158.100

100+ parts

-

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287

$158.100

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QUARKTWIN TECHNOLOGY LTD

USA . 5,098 parts In-Stock

1+ parts

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100+ parts

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5,098

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Corphita

USA . 2,501 parts In-Stock

1+ parts

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2,501

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Parana Technologies

USA . 778 parts In-Stock

1+ parts

-

100+ parts

$0.586

1k+ parts

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10k+ parts

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778

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$0.586

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Overview

Unleash the power of STAC3933 by STMicroelectronics, a top-of-the-line RF Power Field Effect Transistor that guarantees unmatched quality and performance. With a maximum drain current of 20A and a power dissipation of 795W, this N-CHANNEL FET is designed to excel in various applications. From amplifiers to transmitters, this single configuration transistor offers exceptional value and reliability. Trust STMicroelectronics to deliver cutting-edge technology that meets your needs with precision and efficiency. Elevate your projects with the STAC3933 and experience the difference today.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors are known for their high efficiency and fast switching speeds, making this product a good choice for applications requiring high performance.

Configuration: SINGLE

The single configuration simplifies the circuitry and makes it easier to integrate into various electronic designs, making this product versatile and user-friendly.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, reducing installation time and cost, making this product suitable for mass production.

Maximum Drain Current (Abs) (ID): 20 A

The high maximum drain current rating of 20A ensures that this transistor can handle high power applications without getting damaged, providing reliability and durability.

Maximum Power Dissipation (Abs): 795 W

The high power dissipation of 795W indicates the ability of this transistor to withstand high power levels, making it suitable for demanding applications where heat dissipation is crucial.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good RF performance, low noise, and high gain, making this product ideal for RF power applications.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200 °C ensures reliable operation in harsh environments and high-temperature applications, making this product suitable for a wide range of industrial uses.

Technical Specifications

RF Power Field Effect Transistors (FET) STAC3933 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STAC3933 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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