Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
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RF Power Field Effect Transistors (FET) BLF888D attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Ampleon Netherlands B V
Peak Reflow Temperature (C):
Maximum Time At Peak Reflow Temperature (s):
BLF888D Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
The Leading Global Partner in RF Power Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership. The company envisions to make the world a better place through innovation in high frequency applications based on the advanced GaN and LDMOS technologies. Ampleon has more than 1,600 employees worldwide, dedicated to enable their customers to be successful with RF Power products through close cooperation and partnership, innovation, and excellent execution. Its innovative, yet consistent portfolio offers products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio applications.
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
M39029/58-360
TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.
1N4148
Hy Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Laube Technology
BSS138LT1G
Onsemi
BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
SMBJ18CA
Eic Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
LM555CN
Rochester Electronics
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;
SN6505BDBVR
Texas Instruments
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
Hitano Enterprise
BSS138PS,115
NXP Semiconductors
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
2N2222A
Microsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
BAV99
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803ADW
ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.
SS14
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2675M-ADJ/NOPB
LM2675M-ADJ/NOPB by Texas Instruments is a voltage-mode switching regulator with 1A output current, 37V max output voltage, and 260kHz max switching frequency. Ideal for automotive applications due to its -40°C to 125°C operating temperature range and compact small outline package design.
STM32H753IIT6
STM32H753IIT6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs and 2-Ch 12-Bit DACs, suitable for industrial applications requiring high-speed data processing and connectivity via CAN, ETHERNET, USB, and more.
LM358AN
Samsung
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
TIM5359-45SL
Toshiba
Toshiba's TIM5359-45SL is an N-channel RF Power FET with a 15V DS breakdown voltage and 31A drain current. Ideal for C-band applications, it operates in depletion mode with a max power dissipation of 125W at 175°C. The ceramic-metal sealed co-fired package ensures reliable performance in high-frequency environments.
D2225UK
Tt Electronics Plc
D2225UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 4A and VDS of 40V. Ideal for AMPLIFIER applications, this transistor has GULL WING terminals and can withstand up to 200°C operating temperature.
RF4L15400CB4
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
MRF6522-70
Motorola
MRF6522-70 by Motorola is an N-channel RF Power FET with 65V DS breakdown voltage, suitable for amplifier applications in the UHF band. It operates in enhancement mode, with a max drain current of 7A and can withstand temperatures up to 200°C. The transistor features a ceramic-metal sealed co-fired package and is designed for surface mount installation.
934064686112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: S-CQFM-F6; Minimum DS Breakdown Voltage: 65 V;
SD57045
SD57045 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in various electronic devices.
BLF177
New Jersey Semiconductor Products
N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;
RF4L10700CB4
RF Power Field-Effect Transistors;
934065672112
N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Highest Frequency Band: L BAND; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
934065979118
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; No. of Terminals: 4; Minimum DS Breakdown Voltage: 65 V;
SD57030-01
SD57030-01 by STMicroelectronics is an N-channel RF Power FET with a 65V DS breakdown voltage and 4A max drain current. It operates in the ultra-high frequency band, suitable for amplifier applications. This enhancement mode transistor has a max power dissipation of 74W and can withstand temperatures up to 200°C.
SD2931-12W
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DE475-501N44A
IXYS Corporation
DE475-501N44A by IXYS is a N-channel RF Power FET with 500V DS breakdown voltage, suitable for switching applications in the VHF band. It features a max drain current of 48A, operates in enhancement mode, and has a package style of small outline.
PD85006L-E
PD85006L-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount device ensures efficient performance in compact designs.
AFT09H310-04GSR6
N-CHANNEL; Configuration: SINGLE; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; No. of Elements: 1;
A5G35S008N-3400
MRF134
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .9 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STAP57045
STAP57045 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.
MRF6V12250HR3
NXP Semiconductors' MRF6V12250HR3 is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 110 V. It operates in ENHANCEMENT MODE at the L BAND frequency, suitable for high-power applications. The package style is FLANGE MOUNT, making it ideal for surface mount configurations.
ART700FHU
Ampleon Netherlands B V
ART700FHU by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with 177V DS Breakdown Voltage, 26.8 dB Power Gain, and operates in the Ultra High Frequency Band. It is a COMMON SOURCE amplifier transistor with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-performance applications requiring a FLANGE MOUNT package style.
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BLF871S,112
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BLF878,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Case Connection: SOURCE; Terminal Form: FLAT;
BLF861A,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLF861A
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;
Asi Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F4;
N-CHANNEL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; No. of Elements: 2;
BLF888DU
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Package Shape: RECTANGULAR; Terminal Position: DUAL;
BLF881,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1; Minimum DS Breakdown Voltage: 104 V;
BLF881S,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 104 V; Peak Reflow Temperature (C): NOT SPECIFIED;
BLF888D
BLF861
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Drain Current (ID): 18 A; No. of Terminals: 4; Transistor Application: AMPLIFIER;
BLF878
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Qualification: Not Qualified; No. of Terminals: 4;
BLF888BS,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;
BLF872
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BLF881S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Terminal Form: FLAT; Transistor Application: AMPLIFIER;
BLF884P
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BLF872,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
BLF884PS
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Additional Features: HIGH RELIABILITY; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLF888A
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 110 V;
BLF881
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Style (Meter): FLANGE MOUNT;
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