Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLF884PS by NXP Semiconductors is an N-channel RF power FET designed for switching applications. It features a min DS breakdown voltage of 104V, operates in the ultra-high frequency band, and comes in a flatpack ceramic package. Ideal for efficient signal amplification in communication systems.
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Corphita
The ceramic, metal-sealed cofired package provides excellent thermal stability and reliability, making it suitable for high-performance applications.
N-channel devices typically offer better performance characteristics, including lower on-resistance and higher efficiency in switching applications.
This configuration is ideal for amplification and provides high gain, making it essential for RF applications.
Designed for switching applications, this FET provides fast switching speeds, which are critical in RF power systems.
Surface mount technology allows for more compact designs and easier integration into modern electronic circuits.
This high breakdown voltage ensures reliable operation in high-voltage RF applications, enhancing safety and durability.
The rectangular shape allows for efficient use of board space, contributing to better layout designs in complex circuits.
Flat terminals facilitate easier soldering and improve electrical contact, ensuring stability in performance.
Enhancement mode operation provides superior efficiency and greater control in switching, making it optimal for RF signal processing.
Capable of operating in the ultra-high frequency band, this FET is ideal for applications requiring high-speed signals and performance.
Having two elements allows for improved power handling and enhanced performance in multi-element configurations.
Four terminals provide flexibility in circuit design and improve connectivity options for integration into various setups.
The flatpack style aids in better thermal dissipation and allows for a compact footprint on PCB designs.
MOSFET technology offers high input impedance and fast switching speeds, making it highly suitable for RF applications.
Silicon as the element material is well-established for its balance of performance, cost-effectiveness, and availability.
Dual terminal positioning optimizes layout for improved thermal performance and electrical characteristics.
A source case connection facilitates efficient heat management, ensuring robust operational integrity in demanding applications.
RF Power Field Effect Transistors (FET) BLF884PS attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors
Additional Features:
Case Connection:
Configuration:
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Field Effect Transistor Technology:
Highest Frequency Band:
JESD-30 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
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Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
BLF884PS Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
STM32H753IIT6
STMicroelectronics
STM32H753IIT6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs and 2-Ch 12-Bit DACs, suitable for industrial applications requiring high-speed data processing and connectivity via CAN, ETHERNET, USB, and more.
LL4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
FDV303N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
Weitron Technology
MBRS360T3G
Onsemi
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
1N4148
Hy Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SS495ASP
Micro Switch
The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.
1N4148WS
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
RC0603FR-071KL
Yageo
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
2N2222A
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
LM555CMX
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
STM32H743ZIT6
STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
LM317T
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;
BAV99WT1G
BAV99WT1G by Onsemi is a series connected diode with 0.006 us reverse recovery time. It is a small outline rectifier diode with 70V peak reverse voltage, ideal for surface mount applications in electronics requiring fast switching and low forward voltage drop.
LM107H
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
INA826AIDGKR
Texas Instruments
INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.
CG2H40035F
Wolfspeed
CG2H40035F by Wolfspeed is a N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 84V and a min Power Gain (Gp) of 13.5dB. It is commonly used as an amplifier in C Band applications.
MRF136
New Jersey Semiconductor Products
N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 65 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
TGF4212SCMX
TGF4212SCMX by Texas Instruments is an N-CHANNEL RF Power FET for AMPLIFIER applications. Features include 10V DS Breakdown Voltage, DEPLETION MODE operation, and KU BAND frequency band. This RECTANGULAR chip with GALLIUM ARSENIDE technology has 4 terminals and is surface mountable.
MRFE6VP100HR5
N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD55015S-E
STMicroelectronics' PD55015S-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 5A Drain Current. The transistor comes in a PLASTIC/EPOXY package, suitable for surface mount with 73W power dissipation capability.
MRFE6VP61K25HR5
NXP Semiconductors' MRFE6VP61K25HR5 is a N-CHANNEL RF Power FET with 1300W power dissipation. Utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 225°C. Ideal for high-power RF applications requiring efficient signal amplification.
ARF463AP1G
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 500 V; Terminal Position: SINGLE; Transistor Application: AMPLIFIER;
SD2942W
SD2942W by STMicroelectronics is a N-CHANNEL RF Power FET with 40A ID and 500W power dissipation. It operates at max temp of 200°C, suitable for high-power RF applications in various industries.
934061129112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Case Connection: SOURCE;
STAC3932F
STAC3932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 625 W.
MRF6V12500HSR5
Freescale Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified; Case Connection: SOURCE;
BLF861
BLF861 by NXP is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features COMMON SOURCE configuration, 18A ID, and METAL-OXIDE SEMICONDUCTOR technology in a CERAMIC package with FLANGE MOUNT style.
MRF181ZR1
MRF181ZR1 by Onsemi is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 2A, making it ideal for amplifier applications. The transistor features a CERAMIC, METAL-SEALED COFIRED package with GULL WING terminals for surface mount installation.
CGH40006S-AMP1
RF Power Field-Effect Transistors;
PD84010-E
PD84010-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
SD60030
SD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in enhancement mode, and supports L-band frequencies. This surface-mount transistor ensures high performance up to 200 °C.
PD57006-01
PD57006-01 by STMicroelectronics is an N-channel RF power FET designed for switching applications. It features a 65V breakdown voltage, operates at up to 1A drain current, and supports ultra-high frequency bands. Ideal for compact, high-performance circuits in various electronic devices.
BLP15H9S100GZ
Ampleon Netherlands B V
BLP15H9S100GZ by Ampleon Netherlands B V is an N-CHANNEL RF FET with 106V DS Breakdown Voltage and 18dB Power Gain, ideal for AMPLIFIER applications in L BAND. It features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE up to 225°C.
934065606112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 1; Terminal Form: FLAT;
A2T18H450W19SR6
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
BLF871S,112
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BLF878,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Case Connection: SOURCE; Terminal Form: FLAT;
BLF861A,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLF861A
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;
Asi Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F4;
N-CHANNEL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; No. of Elements: 2;
BLF888DU
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Package Shape: RECTANGULAR; Terminal Position: DUAL;
BLF881,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1; Minimum DS Breakdown Voltage: 104 V;
BLF881S,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 104 V; Peak Reflow Temperature (C): NOT SPECIFIED;
BLF888D
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Drain Current (ID): 18 A; No. of Terminals: 4; Transistor Application: AMPLIFIER;
BLF878
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Qualification: Not Qualified; No. of Terminals: 4;
BLF888BS,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;
BLF872
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BLF881S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Terminal Form: FLAT; Transistor Application: AMPLIFIER;
BLF884P
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BLF872,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
BLF888A
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 110 V;
BLF884P,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 2; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
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