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CG2H40010F

Wolfspeed

CG2H40010F by Wolfspeed

Wolfspeed's CG2H40010F is an N-CHANNEL RF FET with 84V DS Breakdown Voltage, 15dB Power Gain for AMPLIFIER applications in C BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE, with max. temp of 150°C and drain current of 1.5A.

Median Price

$100.910

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Mouser Electronics

USA . 836 parts In-Stock

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$100.910

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$77.960

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DigiKey

USA . 272 parts In-Stock

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$100.910

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$80.429

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Verical

USA . 101 parts In-Stock

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$128.600

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101

$128.600

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Richardson RFPD

USA . 28 parts In-Stock

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$72.000

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$65.410

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Nova Conductors

Japan . 24 parts In-Stock

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$64.486

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Vyrian

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Aztec Data Supply Inc.

USA . 163 parts In-Stock

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$0.380

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Aranea Global

USA . 2,000 parts In-Stock

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$63.196

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$60.668

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Continental Prestige Electronics

USA . 5,637 parts In-Stock

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$64.486

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$63.196

5,637

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$63.196

Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$74.785

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$68.802

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$64.470

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$74.785

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Semicontronic

India . 101 parts In-Stock

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$109.310

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$106.577

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$106.031

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101

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Argo Parts USA

USA . 2,639 parts In-Stock

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Overview

Elevate your RF power applications with the CG2H40010F by Wolfspeed. Designed with high-quality materials and advanced technology, this N-CHANNEL FET offers exceptional power gain and a wide operating temperature range. Perfect for amplifier configurations in C BAND frequencies, this transistor provides reliable performance and efficiency. Trust Wolfspeed for cutting-edge solutions that deliver superior results. Experience the difference with the CG2H40010F.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection, ensuring a longer lifespan for the FET.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and efficiency compared to P-channel FETs, making this product a good choice for various applications.

Minimum DS Breakdown Voltage: 84 V

The high breakdown voltage allows for reliable operation in high-power applications without risking damage from voltage spikes.

Minimum Power Gain (Gp): 15 dB

The high power gain indicates that this FET can amplify signals effectively, making it suitable for amplifier applications.

Highest Frequency Band: C BAND

Operating in the C band frequency range makes this FET ideal for applications such as RF amplifiers and microwave communications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without performance degradation.

Transistor Element Material: GALLIUM NITRIDE

Gallium Nitride is known for its high electron mobility and excellent thermal conductivity, making this FET suitable for high-frequency and high-power applications.

Technical Specifications

RF Power Field Effect Transistors (FET) CG2H40010F attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

84 V

Maximum Drain Current (ID):

1.5 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Maximum Feedback Capacitance (Crss):

.186 pF

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Minimum Power Gain (Gp):

15 dB

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

CG2H40010F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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