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BLF6G10S-45,112

NXP Semiconductors

BLF6G10S-45,112 by NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;

Median Price

$49.840

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 182 parts In-Stock

1+ parts

$49.840

100+ parts

$46.850

1k+ parts

$42.360

10k+ parts

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182

$49.840

$46.850

$42.360

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RFMW

USA . 2,040 parts In-Stock

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-

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2,040

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Distributors (In-Stock)

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Digiode

USA . 3,034 parts In-Stock

1+ parts

$47.348

100+ parts

-

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3,034

$47.348

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Vyrian

USA . 11,672 parts In-Stock

1+ parts

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Anansix

USA . 2,166 parts In-Stock

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2,166

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Distributors (Availability)

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Native Components

USA . 94 parts In-Stock

1+ parts

$0.612

100+ parts

-

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94

$0.612

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Northwest PG Solutions

USA . 2,315 parts In-Stock

1+ parts

$0.673

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2,315

$0.673

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Advanced Electronics

New Zealand . 700 parts In-Stock

1+ parts

$1.737

100+ parts

$1.581

1k+ parts

$1.424

10k+ parts

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700

$1.737

$1.581

$1.424

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AZTECH Wire

Italy . 1,152 parts In-Stock

1+ parts

$14.640

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1,152

$14.640

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Corphita

USA . 4,291 parts In-Stock

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$44.856

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4,291

$44.856

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Component Stockers USA

USA . 180 parts In-Stock

1+ parts

$50.590

100+ parts

$47.560

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180

$50.590

$47.560

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Microchip USA

USA . 6,037 parts In-Stock

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6,037

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UNI Independent Distributors

Spain . 2,362 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,357 parts In-Stock

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2,357

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Perfect Parts

USA . 426 parts In-Stock

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426

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Technical Specifications

RF Power Field Effect Transistors (FET) BLF6G10S-45,112 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

13 A

Maximum Drain Current (ID):

13 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFP-F2

Moisture Sensitivity Level (MSL):

NOT APPLICABLE

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLF6G10S-45,112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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