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PD84010-E

STMicroelectronics

PD84010-E by STMicroelectronics

PD84010-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 3,530 parts In-Stock

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3,530

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Digiode

USA . 1,719 parts In-Stock

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Anansix

USA . 1,636 parts In-Stock

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1,636

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482

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IDEA Electronic Components Group

UK . 1,784 parts In-Stock

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$1.016

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$0.914

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1,784

$1.016

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$0.914

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MKK Technologies

India . 2,091 parts In-Stock

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$1.910

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$1.910

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DigiPath Technology Company

USA . 2,091 parts In-Stock

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$1.910

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$1.910

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$2.276

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$2.071

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$1.866

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3,000

$2.276

$2.071

$1.866

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AZTECH Wire

Italy . 880 parts In-Stock

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$19.350

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880

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Corphita

USA . 4,280 parts In-Stock

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Parana Technologies

USA . 1,063 parts In-Stock

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$1.214

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Overview

Elevate your projects with the PD84010-E from STMicroelectronics, a leader in innovation and reliability. This N-Channel RF Power FET delivers exceptional performance for amplification in ultra-high-frequency applications, ensuring robust signal integrity. Designed for easy integration with its compact surface mount package, it offers unmatched efficiency and thermal management. Trust STMicroelectronics to power your next breakthrough with quality that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package ensures a lightweight design while providing good thermal and mechanical stability, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer higher electron mobility and efficiency, resulting in better performance in amplification and switching applications.

Configuration: SINGLE

A single configuration simplifies circuit design and minimizes space requirements, ideal for compact electronic devices.

Transistor Application: AMPLIFIER

This transistor is optimized for amplification use, ensuring high fidelity and efficient signal processing in audio and radio frequency applications.

Surface Mount: YES

Surface mount capability allows for automated assembly processes and reduces the overall size of the circuit board.

Minimum DS Breakdown Voltage: 40 V

A minimum breakdown voltage of 40 V provides a robust operating range, ensuring dependable performance in high-voltage applications.

Package Shape: RECTANGULAR

The rectangular shape provides a compact footprint, allowing efficient use of PCB space while enabling better heat dissipation.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and provide a secure connection, enhancing the reliability of the component in circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for efficient switching characteristics, making it a suitable choice for modern electronic applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Supports UHF applications, making this transistor ideal for high-speed communication systems and advanced RF applications.

Maximum Drain Current (Abs) (ID): 8 A

A maximum drain current capability of 8 A ensures that this transistor can handle substantial loads, providing versatility across various applications.

No. of Terminals: 2

With only 2 terminals, the design is simplified and allows for efficient circuit layout, perfect for streamlined and effective designs.

Maximum Power Dissipation (Abs): 95 W

A high power dissipation rating of 95 W ensures that this transistor can operate efficiently under demanding conditions without thermal issues.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables high-density mounting on PCBs, making it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides superior switching speeds and low power consumption, which enhances the efficiency and longevity of the device.

Maximum Operating Temperature: 165 °C

A maximum operating temperature of 165 °C ensures reliability under high temperature conditions, making it suitable for challenging environments.

Transistor Element Material: SILICON

Silicon as the element material offers excellent electrical properties, ensuring high performance and stability in various applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and improves corrosion resistance, ensuring long-term reliability.

Maximum Drain Current (ID): 8 A

Reiterating the maximum drain current of 8 A highlights the component's robustness and suitability for high power applications.

Terminal Position: DUAL

Dual terminal positioning offers increased design flexibility, allowing for easier integration into various circuit configurations.

Moisture Sensitivity Level (MSL): 3

An MSL of 3 indicates moderate sensitivity to moisture, which helps in planning the manufacturing and assembly process accordingly.

Case Connection: SOURCE

Source case connection provides stable grounding in circuits, ensuring reliable operation and minimizing noise.

Technical Specifications

RF Power Field Effect Transistors (FET) PD84010-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD84010-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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