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D1020UK

Tt Electronics Plc

D1020UK by Tt Electronics Plc

D1020UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a max ID of 25A and a 200°C operating temperature. Commonly used as an amplifier, it has a metal-oxide semiconductor technology and gold terminal finish for high-performance applications.

Median Price

$85.837

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$85.837

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72

$85.837

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Vyrian

USA . 1,262 parts In-Stock

1+ parts

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1,262

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,485 parts In-Stock

1+ parts

$0.940

100+ parts

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1,485

$0.940

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Ampacity Inc.

Singapore . 1,490 parts In-Stock

1+ parts

$7.050

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1,490

$7.050

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AZTECH Wire

Italy . 465 parts In-Stock

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$11.861

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465

$11.861

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Continental Prestige Electronics

USA . 4,630 parts In-Stock

1+ parts

$85.837

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$84.120

4,630

$85.837

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$84.120

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$85.837

100+ parts

-

1k+ parts

$81.545

10k+ parts

$79.828

2,000

$85.837

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$81.545

$79.828

Argo Parts USA

USA . 4,583 parts In-Stock

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4,583

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Overview

Elevate your RF power applications with the D1020UK by Tt Electronics Plc. Crafted with precision and expertise, this N-channel field effect transistor boasts a common source configuration for optimal performance in amplifiers. With a breakthrough design featuring metal-oxide semiconductor technology, this transistor delivers reliable operation in the ultra-high frequency band. Whether you're enhancing your amplifier or pushing the boundaries of RF power, the D1020UK offers unparalleled quality and value that sets it apart from the competition. Step up your game with Tt Electronics Plc.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package provides durability and reliability for the FET, making it suitable for demanding applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics and are commonly used in power applications, making this product a good choice for amplifiers.

Configuration: COMMON SOURCE, 2 ELEMENTS

The common source configuration with 2 elements allows for efficient amplification and power handling capabilities.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Minimum DS Breakdown Voltage: 70 V

With a minimum breakdown voltage of 70V, this FET can handle high voltages without risk of damage, ensuring reliability in high-power operations.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into electronic circuits, simplifying the design process.

Surface Mount: YES

Being surface mountable makes installation and soldering easier, saving time and effort during assembly.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high efficiency and performance, making this FET a reliable choice for high-frequency applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this FET can withstand high temperatures without compromising performance, ensuring reliability in challenging environments.

Maximum Drain Current (ID): 25 A

The high maximum drain current of 25A allows the FET to handle large power loads, making it suitable for high-power applications.

Technical Specifications

RF Power Field Effect Transistors (FET) D1020UK attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Tt Electronics Plc

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

70 V

Maximum Drain Current (ID):

25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F4

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

D1020UK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4320-99-614-7411, 4320996147411

NIIN

996147411

Manufacturer Highlights

Tt Electronics Plc

Our primary focus areas for growth and investment are in the end markets of healthcare, aerospace & defence, and automation & electrification which includes products that address resource scarcity, improve energy efficiency, support renewables and drive productivity, connectivity and health.

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