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D1025UK

Tt Electronics Plc

D1025UK by Tt Electronics Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: ROUND; No. of Elements: 1; Maximum Drain Current (ID): 25 A;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Power Field Effect Transistors (FET) D1025UK attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Tt Electronics Plc

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

70 V

Maximum Drain Current (ID):

25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CXFM-F6

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

D1025UK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Tt Electronics Plc

Our primary focus areas for growth and investment are in the end markets of healthcare, aerospace & defence, and automation & electrification which includes products that address resource scarcity, improve energy efficiency, support renewables and drive productivity, connectivity and health.

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