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D1028UK

Tt Electronics Plc

D1028UK by Tt Electronics Plc

D1028UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR, METAL-OXIDE SEMICONDUCTOR technology, and can withstand up to 200°C operating temperature.

Median Price

$175.520

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$175.520

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10

$175.520

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Vyrian

USA . 399 parts In-Stock

1+ parts

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399

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Connector Distribution Corp

USA . 2 parts In-Stock

1+ parts

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100+ parts

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2

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Right Parts Inc.

USA . 2 parts In-Stock

1+ parts

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2

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Manotoh

Italy . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,090 parts In-Stock

1+ parts

$1.200

100+ parts

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3,090

$1.200

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AZTECH Wire

Italy . 750 parts In-Stock

1+ parts

$18.745

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750

$18.745

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Ampacity Inc.

Singapore . 1,487 parts In-Stock

1+ parts

$56.050

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1,487

$56.050

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Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

$175.500

100+ parts

$166.725

1k+ parts

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10k+ parts

$156.195

50

$175.500

$166.725

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$156.195

Continental Prestige Electronics

USA . 4,818 parts In-Stock

1+ parts

$175.520

100+ parts

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$172.009

4,818

$175.520

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$172.009

Argo Parts USA

USA . 1,316 parts In-Stock

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1,316

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Overview

Experience the power of cutting-edge technology with the D1028UK RF Power Field Effect Transistor by Tt Electronics Plc. Known for their superior quality and innovative designs, Tt Electronics Plc delivers top-of-the-line components for a wide range of applications. The D1028UK offers customers unparalleled performance and reliability, making it the ideal choice for amplifier applications in the ultra high frequency band. With a minimum DS breakdown voltage of 70V and operating temperature of up to 200°C, this transistor is designed to meet the most demanding requirements. Upgrade your projects with the D1028UK and experience the difference that Tt Electronics Plc can make.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides high thermal conductivity and excellent protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and can handle high power applications effectively.

Transistor Application: AMPLIFIER

Ideal for amplifying signals in RF applications with high efficiency.

Surface Mount: YES

Easy to integrate onto circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 70 V

Can handle high voltages, making it suitable for power amplification tasks.

Package Shape: RECTANGULAR

Facilitates easy mounting and soldering onto circuit boards.

Operating Mode: ENHANCEMENT MODE

Provides high output power and efficiency in RF amplifier applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Allows for high-speed signal amplification and transmission.

No. of Elements: 2

Provides dual elements for enhanced performance and flexibility in RF applications.

No. of Terminals: 4

Offers multiple connections for enhanced functionality and integration into circuits.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and easy connection to external components.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Ensures reliable and efficient operation in RF power applications.

Maximum Operating Temperature: 200 °C

Can withstand high temperatures, making it suitable for demanding operating conditions.

Transistor Element Material: SILICON

Provides high-performance characteristics and reliability for the transistor.

Terminal Position: DUAL

Allows for versatile connections and configurations in RF circuits.

Case Connection: SOURCE

Provides a common connection point for the transistor elements, simplifying circuit design.

Technical Specifications

RF Power Field Effect Transistors (FET) D1028UK attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Tt Electronics Plc

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

70 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

D1028UK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Tt Electronics Plc

Our primary focus areas for growth and investment are in the end markets of healthcare, aerospace & defence, and automation & electrification which includes products that address resource scarcity, improve energy efficiency, support renewables and drive productivity, connectivity and health.

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