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PD57070S-E

STMicroelectronics

PD57070S-E by STMicroelectronics

PD57070S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 95 W.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 4,017 parts In-Stock

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Digiode

USA . 1,893 parts In-Stock

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Anansix

USA . 1,486 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,139 parts In-Stock

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Flip Electronics

USA . 450 parts In-Stock

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IDEA Electronic Components Group

UK . 1,140 parts In-Stock

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$1.520

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$1.368

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MKK Technologies

India . 420 parts In-Stock

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$2.858

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DigiPath Technology Company

USA . 420 parts In-Stock

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$2.858

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$2.858

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AZTECH Wire

Italy . 846 parts In-Stock

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$10.840

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Kepictronics

USA . 5,000 parts In-Stock

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Parana Technologies

USA . 1,368 parts In-Stock

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Perfect Parts

USA . 1,350 parts In-Stock

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Corphita

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GreenTree Electronics

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Overview

Elevate your projects with the PD57070S-E from STMicroelectronics, a premier choice in RF Power FETs. Renowned for exceptional quality and reliability, STMicroelectronics delivers unmatched performance for ultra-high frequency applications. This robust N-channel transistor excels in amplification, ensuring efficient power management. Enjoy the benefits of advanced technology and superior thermal performance, empowering your designs with innovation and longevity. Unlock endless possibilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight, ensuring good protection and thermal performance for the FET.

Polarity or Channel Type: N-CHANNEL

An N-channel configuration allows for higher efficiency and better performance in amplification applications.

Configuration: SINGLE

A single transistor design simplifies the integration into circuits, making it easier to use.

Transistor Application: AMPLIFIER

Designed specifically for amplification, ensuring optimal performance in audio and RF applications.

Surface Mount: YES

Surface mount technology facilitates compact designs, making it ideal for space-constrained applications.

Minimum DS Breakdown Voltage: 65 V

Offers a robust operating voltage, providing reliability and stability in high-voltage applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on printed circuit boards.

Terminal Form: FLAT

Flat terminals ensure better contact and reduced inductance when soldered onto the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for lower off-state power consumption, improving efficiency.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for extremely high frequency applications, ensuring excellent performance in RF communication.

Maximum Drain Current (Abs) (ID): 7 A

Can handle high current loads, making it well-suited for power amplifier applications.

No. of Terminals: 2

Simplifies circuit design and integration, reducing complexity in your design.

Maximum Power Dissipation (Abs): 95 W

Allows for substantial power handling, enabling the transistor to operate efficiently in high-power applications.

Package Style (Meter): SMALL OUTLINE

Compact size makes it ideal for applications where space is at a premium.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides fast switching speeds and high efficiency.

Maximum Operating Temperature: 165 °C

High temperature tolerance enhances reliability in demanding environments.

Transistor Element Material: SILICON

Silicon as a material offers good thermal stability and performance characteristics for FETs.

Terminal Finish: Matte Tin (Sn) - annealed

Provides good corrosion resistance and solderability, ensuring reliable connections.

Maximum Drain Current (ID): 7 A

Repeated for emphasis on its capacity for high current loads, underscoring its versatility.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in circuit design.

Moisture Sensitivity Level (MSL): 3

Moderate moisture sensitivity indicates a balance between reliability and ease of handling.

Case Connection: SOURCE

Source connection ensures proper functioning within the circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient soldering processes, ensuring good assembly quality.

Peak Reflow Temperature °C: 250

High peak reflow temperature supports compatibility with a variety of soldering techniques.

Technical Specifications

RF Power Field Effect Transistors (FET) PD57070S-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

250

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD57070S-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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