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SD60030

STMicroelectronics

SD60030 by STMicroelectronics

SD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in enhancement mode, and supports L-band frequencies. This surface-mount transistor ensures high performance up to 200 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,765 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,765

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-

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Vyrian

USA . 4,135 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,135

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-

-

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Anansix

USA . 2,458 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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2,458

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,119 parts In-Stock

1+ parts

$0.456

100+ parts

-

1k+ parts

$0.411

10k+ parts

-

1,119

$0.456

-

$0.411

-

MKK Technologies

India . 1,660 parts In-Stock

1+ parts

$0.858

100+ parts

-

1k+ parts

-

10k+ parts

-

1,660

$0.858

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-

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DigiPath Technology Company

USA . 1,660 parts In-Stock

1+ parts

$0.858

100+ parts

-

1k+ parts

-

10k+ parts

-

1,660

$0.858

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-

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Corphita

USA . 3,610 parts In-Stock

1+ parts

-

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3,610

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Parana Technologies

USA . 1,227 parts In-Stock

1+ parts

-

100+ parts

$0.546

1k+ parts

-

10k+ parts

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1,227

-

$0.546

-

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Overview

Unlock powerful performance with the SD60030 from STMicroelectronics, a leader in innovation. This N-channel RF Power FET excels as an amplifier, delivering unmatched efficiency and reliability for your communication systems. Designed for versatile applications, its enhanced operational capabilities ensure you achieve superior signal integrity and extended range. Trust in STMicroelectronics to elevate your projects with quality that stands the test of time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers durability and weight efficiency, making the product suitable for various environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel type typically provides better performance, higher efficiency, and faster switching speeds compared to P-channel transistors.

Configuration: SINGLE

A single configuration allows for simpler circuit design, making integration easier in various applications.

Transistor Application: AMPLIFIER

Designed for amplification, this FET is ideal for use in audio, RF, and signal processing applications, enhancing performance.

Surface Mount: YES

Surface mount technology enables compact designs and improves assembly efficiency, essential for modern electronics.

Minimum DS Breakdown Voltage: 65 V

With a minimum breakdown voltage of 65 V, this transistor is robust and suitable for high-voltage applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs, allowing for more efficient layout designs.

Terminal Form: FLAT

Flat terminal form promotes better thermal handling and ease of soldering, leading to more reliable connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides improved efficiency and performance characteristics for amplification tasks.

Highest Frequency Band: L BAND

Operating in the L band makes this transistor suitable for communication applications, ensuring reliable signal transmission.

No. of Terminals: 2

A two-terminal design simplifies connectivity and minimizes layout space, making it ideal for compact applications.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging offers secure mounting options, enhancing stability and heat dissipation in high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and excellent switching performance, making it a reliable choice for modern applications.

Maximum Operating Temperature: 200 °C

With a maximum temperature tolerance of 200 °C, this product is suitable for high-temperature environments, enhancing longevity.

Transistor Element Material: SILICON

Silicon's semiconductor properties ensure efficient performance and reliable operation across a wide range of applications.

Terminal Position: DUAL

Dual terminal position enhances versatility in mounting and facilitates easy connection within various circuit designs.

Case Connection: SOURCE

Source case connection simplifies design considerations and improves thermal management, ensuring better performance.

Technical Specifications

RF Power Field Effect Transistors (FET) SD60030 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD60030 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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