Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
CGH40010F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND frequency range and uses Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, this transistor has a max operating temperature of 105°C and features a ceramic, metal-sealed co-fired package body.
Median Price
$119.341
Lifecycle Status
Suppliers In-Stock
9
In-Stock Inventory
1k+
DigiKey
1+ parts
$109.980
100+ parts
$87.870
1k+ parts
-
10k+ parts
Mouser Electronics
$110.370
Chip1Stop
$136.000
Verical
$128.313
Nova Conductors
$64.486
Vyrian
Chip Stock
Euro-Tech
Classic Components Corporation
Aztec Data Supply Inc.
$0.770
Advanced Electronics
$62.074
$58.970
Continental Prestige Electronics
$63.720
$62.446
Netroflash
$63.196
Semicontronic
$64.660
$63.044
$62.720
Microchip USA
$173.213
Authorized Procurement Solutions
Argo Parts USA
Robosynatics
Lucentia Tech
$62.223
Perfect Parts
The ceramic and metal-sealed cofired package body material offers robust protection, ensuring the longevity and reliability of the RF Power FET.
N-channel FETs typically have higher electron mobility and faster switching speeds, making them ideal for applications where high performance is crucial.
Single configuration simplifies the circuit design and integration process, offering ease of use and compatibility with various systems.
Designed specifically for amplifier applications, this RF Power FET is optimized for providing high power gain and signal amplification.
With a minimum breakdown voltage of 120V, this RF Power FET can handle high voltage levels without compromising performance or safety.
Surface mount capability simplifies the installation process, making it suitable for compact and space-constrained electronic devices.
The rectangular package shape offers easy handling and integration into various electronic systems, enhancing versatility and convenience.
Enhancement mode operation enables precise control over the transistor's conduction, allowing for efficient power management and performance optimization.
Designed for use in the C band frequency range, this RF Power FET is ideal for applications requiring high-frequency signal amplification and transmission.
Having 2 terminals simplifies the circuit connection process, making it easier to integrate this RF Power FET into electronic systems.
The flange mount package style offers secure mounting and reliable connection, ensuring stable performance in various operating conditions.
High electron mobility technology enhances the transistor's performance capabilities, providing better power efficiency and signal amplification.
With a maximum operating temperature of 105°C, this RF Power FET can withstand high temperature conditions, ensuring reliable operation in demanding environments.
Utilizing Gallium Nitride as the transistor element material offers high electron mobility and improved performance, making it suitable for high-power applications.
The gold over nickel terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable signal transmission and long-term durability.
Having dual terminal positions offers flexibility in circuit connection and integration, making it versatile for various electronic system designs.
The source case connection ensures a stable and reliable grounding point, enhancing the overall performance and efficiency of the RF Power FET.
RF Power Field Effect Transistors (FET) CGH40010F attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Wolfspeed
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
CGH40010F Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - CGH400 Assembly 6/Dec/2018
At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.
1N4148WS
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317AEMP/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: SOP; Terminal Form: GULL WING; Qualification Status: Not Qualified; Width: 3.56 mm;
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Fairchild Semiconductor
BSS138
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
SSL-LXA228SRC-TR11
Lumex
SSL-LXA228SRC-TR11 by Lumex is a 1.9mm SINGLE COLOR LED with peak wavelength of 660nm and max forward current of 0.03A. Ideal for applications requiring SUPER RED light emission, such as indicator lights in electronic devices due to its clear lens and surface mounting feature.
LM555CN
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
2N2222A
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138PS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
International Devices
CRCW06030000Z0EAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06030000Z0EAHP is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating temp range -55 to 155 °C, it's SMT package style makes it ideal for automotive applications meeting AEC-Q200 standard.
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
ULN2803A
Rochester Electronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
1N4148WT
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358MX
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
43025-0400
Molex
The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.
1N4148
Vicor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148W-7-F
Diodes Incorporated
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
A2T18H160-24SR3
NXP Semiconductors
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD54008S
STMicroelectronics
STMicroelectronics PD54008S is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 5A, 73W Power Dissipation, and operates at up to 165 °C temperature.
SD57045-01
SD57045-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures reliable performance up to 200 °C.
A5G35S008N-3400
RF Power Field-Effect Transistors;
PD57002-01
PD57002-01 by STMicroelectronics is an N-channel RF power FET designed for switching applications. It features a 65V breakdown voltage, operates at ultra-high frequencies, and supports a max drain current of 0.25A. Ideal for compact, high-performance circuits in various electronic devices.
RF2L16080CF2
IXZR08N120A
IXYS Corporation
IXZR08N120A by IXYS Corp is an N-CHANNEL FET with 1200V DS breakdown voltage, 8A max drain current, and 250W power dissipation. Ideal for switching applications in RF power systems due to its single configuration with built-in diode and enhancement mode operation. Package: PLASTIC/EPOXY, Shape: RECTANGULAR, Terminals: THROUGH-HOLE.
BLF246,112
BLF246,112 by NXP Semiconductors is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the VERY HIGH FREQUENCY BAND and has a max ID of 13A. Ideal for AMPLIFIER applications, this METAL-OXIDE SEMICONDUCTOR FET is designed for ENHANCEMENT MODE operation in a FLANGE MOUNT package.
TGF2023-2-05
Triquint Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Position: UPPER; Maximum Drain Current (Abs) (ID): 5 A;
A3G26H501W17S
AFT05MS004NT1
Freescale Semiconductor
RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
A3T18H455W23SR6
NXP Semiconductors A3T18H455W23SR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, 15dB Power Gain, and L BAND frequency. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE with a temperature range of -40 to 225 °C.
RF2L16180CF2
ST16010
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MRFE6VP61K25HR5
NXP Semiconductors' MRFE6VP61K25HR5 is a N-CHANNEL RF Power FET with 1300W power dissipation. Utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 225°C. Ideal for high-power RF applications requiring efficient signal amplification.
PD20015TR-E
PD20015TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power environments with a max dissipation of 79 W.
MRFE6VP5300NR1
RF Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;
MRFE6VP100HSR5
N-CHANNEL; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
T2G6003028-FL
MRF8P20140WHSR5
MRF8P20140WHSR5 by Freescale is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND, has 2 elements, and a max temp of 125°C. Commonly used as an amplifier in surface mount applications due to its ceramic-metal package body material.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
CGH40006P
Wolfspeed
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Package Shape: RECTANGULAR; Maximum Drain Current (ID): .75 A;
CGH40045F
CGH40045F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for S BAND applications. Featuring HIGH ELECTRON MOBILITY GaN technology, it operates in ENHANCEMENT MODE at up to 175°C. This FLANGE MOUNT transistor has a METAL-SEALED COFIRED CERAMIC package and GOLD OVER NICKEL terminal finish.
CGH40025F
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
CGH40010P
CGH40010P by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND, featuring HIGH ELECTRON MOBILITY GaN technology. This amplifier transistor has a max temperature of 105°C and comes in a RECTANGULAR package for surface mount applications.
CGH40006S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 120 V; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CGH40120F
CGH40120F by Wolfspeed is an N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, ideal for AMPLIFIER applications. Featuring GALLIUM NITRIDE technology, it has a max temp of 150°C and can operate from -40 to 150°C.
CGH40006S-AMP1
CGH40006S-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: S-PDSO-N6; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Package Style (Meter): SMALL OUTLINE;
CGH40025P
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel; Terminal Form: FLAT;
CGH40120F-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 2;
CGH40180PP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Highest Frequency Band: S BAND; Peak Reflow Temperature (C): NOT SPECIFIED;
CGH40006P-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY;
CGH40035F-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; No. of Terminals: 2;
CGH40035F
CGH40035F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the S BAND frequency range and features a Gallium Nitride transistor element. Ideal for amplifier applications, this FET has a ceramic, metal-sealed co-fired package body and can withstand temperatures up to 175°C.
CGH40045F-TB
CGH40045F-TB by Wolfspeed is a ceramic, metal-sealed co-fired RF power FET with N-channel polarity. It operates in enhancement mode and has a min DS breakdown voltage of 120V. This transistor is commonly used as an amplifier in S-band applications.
CGH40045P
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Transistor Element Material: GALLIUM NITRIDE; Qualification: Not Qualified;
CGH40090PP-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 120 V; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; No. of Terminals: 4;
CGH40090PP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: GALLIUM NITRIDE;
CGH40180PP-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 120 V; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY;
CGH40120P
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 120 V; Peak Reflow Temperature (C): NOT SPECIFIED;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved