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CGH40035F

Wolfspeed

CGH40035F by Wolfspeed

CGH40035F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the S BAND frequency range and features a Gallium Nitride transistor element. Ideal for amplifier applications, this FET has a ceramic, metal-sealed co-fired package body and can withstand temperatures up to 175°C.

Median Price

$334.480

Lifecycle Status

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Mouser Electronics

USA . 1 parts In-Stock

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$316.530

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DigiKey

USA . 53 parts In-Stock

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$334.480

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$277.616

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Verical

USA . 274 parts In-Stock

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$368.050

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Chip1Stop

Japan . 116 parts In-Stock

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$414.000

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$405.000

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Richardson RFPD

USA . 50 parts In-Stock

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$235.040

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Nova Conductors

Japan . 10 parts In-Stock

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$184.200

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Vyrian

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Bristol Electronics

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Netroflash

USA . 2,000 parts In-Stock

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$184.200

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,178 parts In-Stock

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Perfect Parts

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Overview

Elevate your RF power applications with the CGH40035F by Wolfspeed. Built with high-quality materials and advanced technology, this N-CHANNEL FET offers unparalleled performance in amplifier applications within the S BAND frequency range. With a ceramic, metal-sealed package and gold over nickel terminal finish, this single-channel transistor ensures reliability and durability. Experience enhanced efficiency and power with Wolfspeed's cutting-edge Gallium Nitride technology. Maximize your system's potential with the CGH40035F - the ultimate choice for your RF power needs.

Feature Benefit Bullets

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Polarity or Channel Type:

N-CHANNEL

Configuration:

SINGLE - Ideal for simple amplifier circuits.

Transistor Application:

AMPLIFIER - Specifically designed for amplifier use.

Surface Mount:

YES - Easy integration onto circuit boards.

Minimum DS Breakdown Voltage:

120 V - Reliable performance under high voltage conditions.

Package Shape:

RECTANGULAR - Efficient use of space in circuits.

Terminal Form:

FLAT - Easy to connect to other components.

Operating Mode:

ENHANCEMENT MODE - Enhanced performance and efficiency.

Highest Frequency Band:

S BAND - Suitable for high-frequency applications.

No. of Terminals:

2 - Simple and easy to connect in circuits.

Package Style (Meter):

FLANGE MOUNT - Allows for secure mounting in place.

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY - Provides high-speed operation.

Maximum Operating Temperature:

175 °C - Can withstand high temperatures without damage.

Transistor Element Material:

GALLIUM NITRIDE - Offers high performance and reliability.

Terminal Finish:

GOLD OVER NICKEL - Provides corrosion resistance for longevity.

Terminal Position:

DUAL - Offers flexibility in circuit configurations.

Case Connection:

SOURCE - Secure and reliable connection for effective performance.

Technical Specifications

RF Power Field Effect Transistors (FET) CGH40035F attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

120 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F2

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

GOLD OVER NICKEL

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

CGH40035F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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