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PD57006S-E

STMicroelectronics

PD57006S-E by STMicroelectronics

PD57006S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,955 parts In-Stock

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5,955

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Digiode

USA . 2,467 parts In-Stock

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2,467

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Anansix

USA . 1,227 parts In-Stock

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1,227

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IDEA Electronic Components Group

UK . 167 parts In-Stock

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$0.359

100+ parts

-

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$0.323

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167

$0.359

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$0.323

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MKK Technologies

India . 146 parts In-Stock

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$0.675

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146

$0.675

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DigiPath Technology Company

USA . 146 parts In-Stock

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$0.675

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146

$0.675

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AZTECH Wire

Italy . 290 parts In-Stock

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$9.290

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290

$9.290

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QUARKTWIN TECHNOLOGY LTD

USA . 23,427 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,390 parts In-Stock

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Corphita

USA . 4,729 parts In-Stock

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4,729

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Perfect Parts

USA . 465 parts In-Stock

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465

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Parana Technologies

USA . 190 parts In-Stock

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$0.429

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190

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$0.429

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Overview

Unlock unparalleled performance with the PD57006S-E from STMicroelectronics, a leader in semiconductor innovation. This N-channel RF Power FET excels in ultra-high frequency applications, delivering robust amplification with exceptional efficiency. Enjoy reliability and superior thermal management in a compact design, perfect for your next project. Trust in STMicroelectronics’ commitment to quality and innovation—experience enhanced functionality and elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance and efficiency in switching applications, enhancing overall device functionality.

Configuration: SINGLE

A single configuration allows for simpler designs and integration into circuits, facilitating easier usage in compact applications.

Transistor Application: AMPLIFIER

Designed for amplification, this FET is ideal for enhancing signal strength in audio and radio frequency systems.

Surface Mount: YES

Surface mount capability supports automated assembly processes, reducing manufacturing costs and improving assembly efficiency.

Minimum DS Breakdown Voltage: 65 V

A minimum breakdown voltage of 65 V enables the transistor to operate safely in high-voltage applications.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact footprint, making it easier to integrate into space-constrained circuit boards.

Terminal Form: FLAT

Flat terminals ensure reliable soldering and efficient thermal management, important for maintaining device performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides better control and efficiency for switching applications, making this FET versatile in various circuits.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

The ability to operate in the UHF band allows this FET to be used in advanced communication systems and RF applications.

Maximum Drain Current (Abs) (ID): 1 A

A maximum drain current of 1 A supports a wide range of applications while ensuring reliable performance under load.

No. of Terminals: 2

With just two terminals, the device simplifies design and integration into various circuits, promoting ease of use.

Maximum Power Dissipation (Abs): 20 W

A power dissipation rating of 20 W allows for effective heat management in high-power applications, increasing reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances space efficiency on PCBs, making it a suitable choice for compact devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology enables high input impedance and low power consumption, improving circuit efficiency and performance.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures reliable performance even in demanding thermal environments.

Transistor Element Material: SILICON

Silicon as a core material provides good electrical properties, ensuring stable and efficient transistor operation.

Terminal Finish: MATTE TIN

Matte tin finishes enhance solderability and protect terminal surfaces from oxidation, ensuring longer device life.

Terminal Position: DUAL

Dual terminal position aids in easier routing on PCBs and facilitates flexible designs in circuit layouts.

Case Connection: SOURCE

The case connection to the source enhances thermal management, improving efficiency in high-power applications.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures compatibility with standard soldering processes without damaging the device.

Peak Reflow Temperature °C: 250

A peak reflow temperature of 250 °C ensures compatibility with lead-free soldering processes, making it suitable for modern manufacturing.

Technical Specifications

RF Power Field Effect Transistors (FET) PD57006S-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

250

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD57006S-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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