Loading...

TIM5359-45SL

Toshiba

TIM5359-45SL by Toshiba

Toshiba's TIM5359-45SL is an N-channel RF Power FET with a 15V DS breakdown voltage and 31A drain current. Ideal for C-band applications, it operates in depletion mode with a max power dissipation of 125W at 175°C. The ceramic-metal sealed co-fired package ensures reliable performance in high-frequency environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 435 parts In-Stock

1+ parts

$13.050

100+ parts

-

1k+ parts

-

10k+ parts

-

435

$13.050

-

-

-

Continental Prestige Electronics

USA . 2,902 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,902

-

-

-

-

Argo Parts USA

USA . 2,035 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,035

-

-

-

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Overview

Enhance your RF power applications with the top-notch quality of the Toshiba TIM5359-45SL RF Power Field Effect Transistor. As a leading manufacturer in the industry, Toshiba delivers superior performance and reliability. This N-CHANNEL FET offers seamless integration in C BAND systems, providing high power dissipation and operating temperature for optimal efficiency. Elevate your projects with the advanced technology and exceptional value that Toshiba brings to the table. Choose the TIM5359-45SL for unparalleled benefits and advantages in your RF power applications.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

With a ceramic and metal-sealed co-fired package body material, this product offers excellent durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration provides high efficiency and performance in RF power applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into RF power systems.

Surface Mount: YES

Being surface mountable makes the product easy to install and saves space on the PCB.

Highest Frequency Band: C BAND

Operational in the C band frequency range, this transistor is suitable for a wide range of RF applications.

Maximum Power Dissipation Ambient: 125 W

With a high maximum power dissipation rating, this transistor can handle high power levels efficiently.

Maximum Operating Temperature: 175 °C

The ability to operate at up to 175°C allows for reliable performance in high-temperature environments.

Technical Specifications

RF Power Field Effect Transistors (FET) TIM5359-45SL attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Toshiba

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (Abs) (ID):

31 A

Maximum Drain Current (ID):

31 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

125 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

TIM5359-45SL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19